The Republic of Belarus (Sanctions) (EU Exit) Regulations 2019

[F1 PART 2 U.K. Electronics

Textual Amendments

F1 Sch. 2C inserted (5.7.2022) by The Republic of Belarus (Sanctions) (EU Exit) (Amendment) Regulations 2022 (S.I. 2022/748), reg. 1(2), Sch.

3A991 Electronic devices and components
	a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following:
		a.1. A performance speed of 5 GFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more;
		a.2. A clock frequency rate exceeding 25 MHz; or
		a.3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2.5 Mbyte/s;
	b. Storage integrated circuits, as follows:
		b.1. Electrical erasable programmable read-only memories (EEPROMs) with a storage capacity;
			b.1.a. Exceeding 16 Mbits per package for flash memory types; or
			b.1.b. Exceeding either of the following limits for all other EEPROM types:
				b.1.b.1. Exceeding 1 Mbit per package; or
				b.1.b.2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns;
	c. Analog-to-digital converters having any of the following:
		c.1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 million words per second;
		c.2. A resolution of 12 bit with an output rate greater than 105 million words per second;
		c.3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 million words per second; or
		c.4. A resolution of more than 14 bit with an output rate greater than 2.5 million words per second;
	d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700;
	e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1,024 point complex FFT of less than 1 ms;
	f. Custom integrated circuits for which either the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
		f.1. More than 144 terminals; or
		f.2. A typical “basic gate propagation delay time” of less than 0.4 ns;
	g. Traveling-wave “vacuum electronic devices,” pulsed or continuous wave, as follows:
		g.1. Coupled cavity devices, or derivatives thereof;
		g.2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having either of the following:
			g.2.a. An “instantaneous bandwidth” of half an octave or more; and
			g.2.b. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.2; or
			g.2.c. An “instantaneous bandwidth” of less than half an octave; and
			g.2.d. The product of the rated average output power (expressed in kW) and the maximum operating frequency (expressed in GHz) of more than 0.4;
	h. Flexible waveguides designed for use at frequencies exceeding 40 GHz;
	i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., “signal processing” devices employing elastic waves in materials), having either of the following:
		i.1. A carrier frequency exceeding 1 GHz; or
		i.2. A carrier frequency of 1 GHz or less; and
			i.2.a. A frequency side-lobe rejection exceeding 55 dB;
			i.2.b. A product of the maximum delay time and bandwidth (time in µs and bandwidth in MHz) of more than 100; or
			i.2.c. A dispersive delay of more than 10 µs;
	j. Cells as follows:
		j.1. Primary cells having an energy density of 550 Wh/kg or less at 293 K (20ºC);
		j.2. Secondary cells having an energy density of 350 Wh/kg or less at 293 K (20ºC);
Note:3A991.j does not control batteries, including single cell batteries. Technical Notes: 1. For the purposes of 3A991.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms. 2. For the purposes of 3A991.j, a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purposes of 3A991.j.1, a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source. 4. For the purposes of 3A991.j.2, a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source.
	k. “Superconductive” electromagnets or solenoids, specially designed to be fully charged or discharged in less than one minute, having all of the following: Note: 3A991.k does not control “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.
		k.1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute;
		k.2. Inner diameter of the current carrying windings of more than 250 mm; and
		k.3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm 2;
	l. Circuits or systems designed for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following:
		l.1. Resonant operating frequencies exceeding 1 MHz;
		l.2. A stored energy density of 1 MJ/m 3 or more; and
		l.3. A discharge time of less than 1 ms;
	m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rated for a peak current of 500 A or more;
	n. Digital integrated circuits based on any compound semiconductor having an equivalent gate count of more than 300 (2 input gates);
	o. “Space qualified” solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays.
3A992 General purpose electronic equipment, as follows:
	a. Electronic test equipment;
	b. Digital instrumentation magnetic tape data recorders having any of the following;
		b.1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques;
		b.2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or
		b.3. “Space qualified”;
	c. Equipment having a maximum digital interface transfer rate exceeding 60 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;
	d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater;
	e. Modular analogue oscilloscope systems having either of the following:
		e.1. A mainframe with a bandwidth of 1 GHz or greater; or
		e.2. Plug-in modules with an individual bandwidth of 4 GHz or greater;
	f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz;
	g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitising to 8 bits or greater resolution and storing 256 or more samples. Note: This entry controls the following components designed for analogue oscilloscopes: 1. Plug-in units; 2. External amplifiers; 3. Pre-amplifiers; 4. Sampling devices; 5. Cathode ray tubes.
3A999 Specific processing equipment as follows.
	a. Frequency changers capable of operating in the frequency range from 300 up to 600 Hz;
	b. Mass spectrometers;
	c. All flash x-ray machines, and components of pulsed power systems designed therefor, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers;
	d. Pulse amplifiers;
	e. Time delay generation or time interval measurement equipment, as follows:
		e.1. Digital time delay generators having a resolution of 50 nanoseconds or less over time intervals of 1ms or greater; or
		e.2. Multi-channel (three or more) or modular time interval meter and chronometry equipment having a resolution of 50 ns or less over time intervals of 1 ms or greater;
	f. Chromatography and spectrometry analytical instruments.
3B991 Equipment for the manufacture of electronic components and materials, and specially designed components therefor.
	a. Equipment specially designed for the manufacture of electron tubes, optical elements and components controlled by entry 3A001 of Annex I of the Dual-Use Regulation, or entry 3A991;
	b. Equipment for the manufacture of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: Note:3B991.b also controls equipment used or modified for use in the manufacture of other devices, such as imaging devices, electro-optical devices, acoustic-wave devices.
		b.1. Equipment for the processing of materials for the manufacture of devices and components, as specified in the heading of 3B991.b, as follows: Note:3B991 does not control quartz furnace tubes, furnace liners, paddles, boats (except specially designed caged boats), bubblers, cassettes or crucibles specially designed for the processing equipment
			b.1.a. Equipment specially designed for producing polycrystalline silicon and materials controlled by entry 3A001 of Annex I of the Dual-Use Regulation;
			b.1.b. Equipment specially designed for purifying or processing III/V and II/VI semiconductor materials controlled by entries 3C001, 3C002, 3C003, 3C004, or 3C005 of Annex I of the Dual-Use Regulation except crystal pullers, for which see 3B991.b.1.c below;
			b.1.c. Crystal pullers and furnaces, as follows: Note:3B991.b.1.c does not control diffusion and oxidation furnaces.
				b.1.c.1. Annealing or recrystallising equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate exceeding 0.005 m 2 per minute;
				b.1.c.2. “Stored program controlled” crystal pullers having any of the following:
					b.1.c.2.a. Rechargeable without replacing the crucible container;
					b.1.c.2.b. Capable of operation at pressures above 2.5 x 10 5 Pa; or
					b.1.c.2.c. Capable of pulling crystals of a diameter exceeding 100 mm;
			b.1.d. “Stored program controlled” equipment for epitaxial growth having any of the following:
				b.1.d.1. Capable of producing silicon layer with a thickness uniform to less than ± 2.5% across a distance of 200 mm or more;
				b.1.d.2. Capable of producing a layer of any material other than silicon with a thickness uniformity across the wafer of equal to or better than ± 3.5%; or
				b.1.d.3. Capable of rotating individual wafers during processing;
			b.1.e. Molecular beam epitaxial growth equipment;
			b.1.f. Magnetically enhanced ‘sputtering’ equipment with specially designed integral load locks capable of transferring wafers in an isolated vacuum environment; Note: ‘Sputtering’ is an overlay coating process wherein positively charged ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on the substrate. (Note: Triode, magnetron or radio frequency sputtering to increase adhesion of coating and rate of deposition are ordinary modifications of the process.)
			b.1.g. Equipment specially designed for ion implantation, ion-enhanced or photo-enhanced diffusion, having any of the following:
				b.1.g.1. Patterning capability;
				b.1.g.2. Beam energy (accelerating voltage) exceeding 200 keV;
				b.1.g.3 Optimised to operate at a beam energy (accelerating voltage) of less than 10 keV; or
				b.1.g.4. Capable of high energy oxygen implant into a heated “substrate”;
			b.1.h. “Stored program controlled” equipment for selective removal (etching) by means of anisotropic dry methods (e.g., plasma), as follows:
				b.1.h.1. ‘Batch types’ having either of the following:
					b.1.h.1.a. End-point detection, other than optical emission spectroscopy types; or
					b.1.h.1.b. Reactor operational (etching) pressure of 26.66 Pa or less;
				b.1.h.2. ‘Single wafer types’ having any of the following:
					b.1.h.2.a. End-point detection, other than optical emission spectroscopy types;
					b.1.h.2.b. Reactor operational (etching) pressure of 26.66 Pa or less; or
					b.1.h.2.c. Cassette-to-cassette and load locks wafer handling; Notes: 1. ‘Batch types’ refers to machines not specially designed for production processing of single wafers. Such machines can process two or more wafers simultaneously with common process parameters, e.g., RF power, temperature, etch gas species, flow rates. 2. ’Single wafer types’ refers to machines specially designed for production processing of single wafers. These machines may use automatic wafer handling techniques to load a single wafer into the equipment for processing. The definition includes equipment that can load and process several wafers but where the etching parameters, e.g., RF power or end point, can be independently determined for each individual wafer.
			b.1.i. “Chemical vapor deposition” (CVD) equipment, e.g., plasma-enhanced CVD (PECVD) or photo-enhanced CVD, for semiconductor device manufacturing, having either of the following capabilities, for deposition of oxides, nitrides, metals or polysilicon:
				b.1.i.1. “Chemical vapor deposition” equipment operating below 10 5 Pa; or
				b.1.i.2. PECVD equipment operating either below 60 Pa (450 millitorr) or having automatic cassette-to-cassette and load lock wafer handling; Note: 3B991.b.1.i does not control low pressure “chemical vapor deposition” (LPCVD) systems or reactive ’sputtering’ equipment.
			b.1.j. Electron beam systems specially designed or modified for mask making or semiconductor device processing having any of the following:
				b.1.j.1. Electrostatic beam deflection;
				b.1.j.2. Shaped, non-Gaussian beam profile;
				b.1.j.3. Digital-to-analogue conversion rate exceeding 3 MHz;
				b.1.j.4. Digital-to-analogue conversion accuracy exceeding 12 bit; or
				b.1.j.5. Target-to-beam position feedback control precision of 1 μm or finer; Note: 3B991.b.1.j does not control electron beam deposition systems or general purpose scanning electron microscopes.
			b.1.k. Surface finishing equipment for the processing of semiconductor wafers as follows:
				b.1.k.1. Specially designed equipment for backside processing of wafers thinner than 100 μm and the subsequent separation thereof; or
				b.1.k.2. Specially designed equipment for achieving a surface roughness of the active surface of a processed wafer with a two-sigma value of 2 μm or less, total indicator reading (TIR); Note:3B991.b.1.k does not control single-side lapping and polishing equipment for wafer surface finishing.
			b.1.l. Interconnection equipment which includes common single or multiple vacuum chambers specially designed to permit the integration of any equipment controlled by 3B991 into a complete system;
			b.1.m. “Stored program controlled” equipment using “lasers” for the repair or trimming of “monolithic integrated circuits” with either of the following:
				b.1.m.1. Positioning accuracy less than ± 1 μm; or
				b.1.m.2. Spot size (kerf width) less than 3 μm.
		b.2. ‘Masks’, ‘mask’ “substrates,” mask-making equipment and image transfer equipment for the manufacture of devices and components as specified in the heading of 3B991, as follows: Note: The term ’masks’ or ‘mask’ refers to those used in electron beam lithography, X-ray lithography, and ultraviolet lithography, as well as the usual ultraviolet and visible photo-lithography.
			b.2.a. Finished masks, reticles and designs therefor, except:
				b.2.a.1. Finished masks or reticles for the production of integrated circuits not controlled by entry 3A001 of Annex I of the Dual-Use Regulation; or
				b.2.a.2. Masks or reticles, having both of the following:
					b.2.a.2.a. Their design is based on geometries of 2.5 μm or more; and
					b.2.a.2.b. The design does not include special features to alter the intended use by means of production equipment or “software”;
			b.2.b. Mask “substrates” as follows:
				b.2.b.1. Hard surface (e.g., chromium, silicon, molybdenum) coated “substrates” (e.g., glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 125 mm x 125 mm; or
				b.2.b.2. “Substrates” specially designed for X-ray masks;
			b.2.c. Equipment, other than general purpose computers, specially designed for computer aided design (CAD) of semiconductor devices or integrated circuits;
			b.2.d. Equipment or machines, as follows, for mask or reticle fabrication: Note:3B991.b.2.d.1 and b.2.d.2 do not control mask fabrication equipment using photo-optical methods which was either commercially available before the 1st January, 1980, or has a performance no better than such equipment.
				b.2.d.1. Photo-optical step and repeat cameras capable of producing arrays larger than 100 mm x 100 mm, or capable of producing a single exposure larger than 6 mm x 6 mm in the image (i.e., focal) plane, or capable of producing line widths of less than 2.5 μm in the photoresist on the “substrate”;
				b.2.d.2. Mask or reticle fabrication equipment using ion or “laser” beam lithography capable of producing line widths of less than 2.5 μm; or
				b.2.d.3. Equipment or holders for altering masks or reticles or adding pellicles to remove defects;
			b.2.e. “Stored program controlled” equipment for the inspection of masks, reticles or pellicles with:
				b.2.e.1. A resolution of 0.25 μm or finer; and
				b.2.e.2. A precision of 0.75 μm or finer over a distance in one or two coordinates of 63.5 mm or more;
			Note: 3B991.b.2.e does not control general purpose scanning electron microscopes except when specially designed and instrumented for automatic pattern inspection.
			b.2.f. Align and expose equipment for wafer production using photo-optical or X-ray methods, e.g., lithography equipment, including both projection image transfer equipment and step and repeat (direct step on wafer) or step and scan (scanner) equipment, capable of performing any of the following: Note:3B991.b.2.f does not control photo-optical contact and proximity mask align and expose equipment or contact image transfer equipment.
				b.2.f.1. Production of a pattern size of less than 2.5 μm;
				b.2.f.2. Alignment with a precision finer than ± 0.25 μm (3 sigma);
				b.2.f.3. Machine-to-machine overlay no better than ± 0.3 μm; or
				b.2.f.4. A light source wavelength shorter than 400 nm;
			b.2.g. Electron beam, ion beam or X-ray equipment for projection image transfer capable of producing patterns less than 2.5 μm; Note:For focused, deflected-beam systems (direct write systems), see 3B991.b.1.j or b.10.
			b.2.h. Equipment using “lasers” for direct write on wafers capable of producing patterns less than 2.5 μm.
		b.3. Equipment for the assembly of integrated circuits, as follows:
			b.3.a. “Stored program controlled” die bonders having all of the following:
				b.3.a.1. Specially designed for “hybrid integrated circuits”;
				b.3.a.2. X-Y stage positioning travel exceeding 37.5 x 37.5 mm; and
				b.3.a.3. Placement accuracy in the X-Y plane of finer than ± 10 μm;
			b.3.b. “Stored program controlled” equipment for producing multiple bonds in a single operation (e.g., beam lead bonders, chip carrier bonders, tape bonders);
			b.3.c. Semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages controlled by entry 3A001 of Annex I of the Dual-Use Regulation and that have a throughput equal to or more than one package per minute.
		b.4. Filters for clean rooms capable of providing an air environment of 10 or less particles of 0.3 μm or smaller per 0.02832 m 3 and filter materials therefor.
3B992 Equipment for the inspection or testing of electronic components and materials, and specially designed components therefor.
	a. Equipment specially designed for the inspection or testing of electron tubes, optical elements and specially designed components therefor, controlled by entry 3A001 of Annex I of the Dual-Use Regulation or 3A991;
	b. Equipment specially designed for the inspection or testing of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: Note: 3B992.b also controls equipment used or modified for use in the inspection or testing of other devices, such as imaging devices, electro-optical devices, acoustic-wave devices.
		b.1. “Stored program controlled” inspection equipment for the automatic detection of defects, errors or contaminants of 0.6 μm or less in or on processed wafers, “substrates”, other than printed circuit boards or integrated circuits, using optical image acquisition techniques for pattern comparison; Note: 3B992.b.1 does not control general purpose scanning electron microscopes, except when specially designed and instrumented for automatic pattern inspection.
		b.2. Specially designed “stored program controlled” measuring and analysis equipment, as follows:
			b.2.a. Specially designed for the measurement of oxygen or carbon content in semiconductor materials;
			b.2.b. Equipment for line width measurement with a resolution of 1 μm or finer;
			b.2.c. Specially designed flatness measurement instruments capable of measuring deviations from flatness of 10 μm or less with a resolution of 1 μm or finer.
		b.3. “Stored program controlled” wafer probing equipment having any of the following:
			b.3.a. Positioning accuracy finer than 3.5 μm;
			b.3.b. Capable of testing devices having more than 68 terminals; or
			b.3.c. Capable of testing at a frequency exceeding 1 GHz;
		b.4. Test equipment as follows:
			b.4.a. “Stored program controlled” equipment, specially designed for testing discrete semiconductor devices and unencapsulated dice, capable of testing at frequencies exceeding 18 GHz; Technical Note: Discrete semiconductor devices include photocells and solar cells.
			b.4.b. “Stored program controlled” equipment specially designed for testing integrated circuits and “electronic assemblies” thereof, capable of functional testing:
				b.4.b.1. At a ‘pattern rate’ exceeding 20 MHz; or
				b.4.b.2. At a ‘pattern rate’ exceeding 10 MHz but not exceeding 20 MHz and capable of testing packages of more than 68 terminals.
			Notes: 3B992.b.4.b does not control test equipment specially designed for testing: 1. Memory; 2. “Electronic assemblies” for home and entertainment applications; and 3. Electronic components, and integrated circuits not controlled by entry 3A001 of Annex I of the Dual-Use Regulation or 3A991 provided such test equipment does not incorporate computing facilities with “user accessible programmability”. Technical Note: For purposes of 3B992.b.4.b, ‘pattern rate’ is defined as the maximum frequency of digital operation of a tester. It is therefore equivalent to the highest data rate that a tester can provide in non-multiplexed mode. It is also referred to as test speed, maximum digital frequency or maximum digital speed.
			b.4.c. Equipment specially designed for determining the performance of focal-plane arrays at wavelengths of more than 1,200 nm, using “stored program controlled” measurements or computer aided evaluation and having any of the following:
				b.4.c.1. Using scanning light spot diameters of less than 0.12 mm;
				b.4.c.2. Designed for measuring photosensitive performance parameters and for evaluating frequency response, modulation transfer function, uniformity of responsivity or noise; or
				b.4.c.3. Designed for evaluating arrays capable of creating images with more than 32 x 32 line elements;
		b.5. Electron beam test systems designed for operation at 3 keV or below, or “laser” beam systems, for non-contact probing of powered-up semiconductor devices having any of the following:
			b.5.a. Stroboscopic capability with either beam blanking or detector strobing;
			b.5.b. An electron spectrometer for voltage measurements with a resolution of less than 0.5 V; or
			b.5.c. Electrical tests fixtures for performance analysis of integrated circuits;
		Note:3B992.b.5 does not control scanning electron microscopes, except when specially designed and instrumented for non-contact probing of a powered-up semiconductor device.
		b.6. “Stored program controlled” multifunctional focused ion beam systems specially designed for manufacturing, repairing, physical layout analysis and testing of masks or semiconductor devices and having either of the following:
			b.6.a. Target-to-beam position feedback control precision of 1 μm or finer; or
			b.6.b. Digital-to-analogue conversion accuracy exceeding 12 bit;
		b.7. Particle measuring systems employing “lasers” designed for measuring particle size and concentration in air having both of the following:
			b.7.a. Capable of measuring particle sizes of 0.2 μm or less at a flow rate of 0.02832 m 3 per minute or more; and
			b.7.b. Capable of characterising Class 10 clean air or better.
3C992 Positive resists designed for semiconductor lithography specially adjusted (optimised) for use at wavelengths between 370 and 193 nm.
3D991 “Software” specially designed for the “development”, “production”, or “use” of electronic devices, or components controlled by entry 3A991 of Annex I of the Dual-Use Regulation, general purpose electronic equipment controlled by 3A992, or manufacturing and test equipment controlled by 3B991 and 3B992; or “software” specially designed for the “use” of equipment controlled by entry 3B001.g and h of Annex I of the Dual-Use Regulation.
3E991 “Technology” for the “development,” “production” or “use” of electronic devices or components controlled by entry 3A991 of Annex I of the Dual-Use Regulation, general purpose electronic equipment controlled by 3A992, or manufacturing and test equipment controlled by 3B991 or 3B992, or materials controlled by 3C992.]