Dyma’r fersiwn wreiddiol (fel y’i gwnaed yn wreiddiol). Dim ond ar ei ffurf wreiddiol y mae’r eitem hon o ddeddfwriaeth ar gael ar hyn o bryd.
3E Technology
3E001 Technology required for the development or production of goods specified in sub-categories 3A, 3B or 3C;
Note: This entry does not specify technology for the development or production of:
a.Microwave transistors operating at frequencies below 31 GHz;
b.Integrated circuits specified in sub-heads a.3. to a.12. of entry 3A001, having both of the following characteristics:
1.Using technology of one micrometre or more; and
2.Not incorporating multi-layer structures.
N.B.: This Note does not preclude the export of multilayer technology for devices incorporating a maximum of two metal layers and two polysilicon layers.
3E002 Other technology for the development or production of:
a.Vacuum microelectronic devices;
b.Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well or super lattice devices;
c.Superconductive electronic devices;
d.Substrates of films of diamond for electronic components.
3E101 Technology required for the use of goods specified in sub-heads a.1. or a.2. of entry 3A001, entries 3A101 or 3D101.
3E102 Technology required for the development of software specified in entry 3D101.
3E201 Technology required for the use of goods specified in sub-head e.2. of entry 3A001, sub-head e.3. of entry 3A001, sub-head e.5. of entry 3A001, or entries 3A201, 3A202, 3A225 to 3A233.
3E990 Technology required for the use of goods specified in entry 3A990.
Mae’r holl gynnwys ar gael dan Drwydded Llywodraeth Agored v3.0 ac eithrio ble nodir yn wahanol. Yn ychwanegol mae’r safle hwn â chynnwys sy’n deillio o EUR-Lex, a ailddefnyddiwyd dan delerau Penderfyniad y Comisiwn 2011/833/EU ar ailddefnyddio dogfennau o sefydliadau’r UE. Am ragor o wybodaeth gweler ddatganiad cyhoeddus Swyddfa Gyhoeddiadau’r UE ar ailddefnyddio.
