The Export of Goods (Control) Order 1989

GROUP 3F

	Note: Goods specified in the heads of this Group may also be specified in Group 1 of this Part of this Schedule. Electronic equipment including Communications, radar, and Scientific Instruments and apparatus
PL7004	Electrical or electronic equipment, whether or not separately specified in an entry in this Schedule, in respect of which a certificate has been issued to the knowledge of the exporter by or on behalf of the Secretary of State to the effect that the equipment to which the certificate relates meets or has been modified or designed to meeet government standards concerned with the limitation of compromising electromagnetic radiation	W
IL1501	Navigation, direction finding, radar and airborne communication equipment and technology, the following— (a) Airborne communication equipment having any of the following characteristics, and specially designed components and specially designed ODMA software therefor,
	(1) designed to operate at frequencies greater than 156 MHz	C
	(2) incorporating facilities for—
	(i) the rapid selection of more than 200 channels per equipment; or	C
	(ii) equipment using frequency synthesis techniques	C
	except equipment operating in the frequency range of 108 to 137 MHz with 760 channels or fewer at not less than 25 kHz spacing, and which has been in normal civil use for at least one year;
	(3) rated for continuous operation over a range of ambient temperatures extending from below−55°C to above +55°C	C
	(4) designed for modulating methods employing any form of digital modulation using time and frequency redundancy such as Quantized Frequency Modulation (QFM)	C
	except equipment which does not have the characteristics r4ferred to in sub-head (a)(4) above and (a) is to equip civil aircraft, or (b) is normal standard equipment incorporated in civil aircraft.
	(b) Navigation and direction finding equipment and technology, the following: and specially designed components and specially designed ODMA software and specialised testing, calibrating and training/simulating equipment therefor— (1) airborn navigation equipment and direction finding equipment and technology, the following—
	(i) equipment designed to make use of Doppler frequency phenomena, except navigation equipment to be installed in civil aircraft or civil helicopters, and which is normal standard equipment of a type installed in civil aircraft or civil helicopters	C
	(ia) technology for navigation equipment using Doppler frequency phenomena	D
	(ii) equipment utilising the constant velocity or the rectilinear propagation charcteristics of electro-magnetic waves having frequency less than 4 × 1014hz (0.75 microns)	C
	except—  (a)  standard commercial airborne equipment needed to equip civil aircraft or civil helicopters or as normal standard equipment incorporated in civil aircraft or civil helicopters being exported for civil commercial use provided such equipment is in conformity with ICAO standards and assures no function exceeding those resulting from such standards, is not designed to use satellite-broadcasted navigation signals and is not designed to make use of hyperbolic grids at frequencies greater than 3 MHz;  Note: Normal standard equipment includes Marker beacons, ILS, VOR (OMNI), Omega, Loran A and B; or  (b)  Loran C equipment having all of the following characteristics:   (a)   it has been in normal civil use for a period of more than one year;   (b)   it is standard commercial equipment;    (1)    needed to equip civil aircraft or civil helicopters; or    (2)    incorporated in civil aircraft or civil helicopters;   (c)   it is equivalent in all characteristics and performances to srtandard equipment of aircraft not specified in entry IL1460 in Group 3E;   (d)   it is in conformity wityh ICAO standards;   (e)   itis not designed to make use of hyperbolic grids at frequencies higher than 3MHz;   (f)   it does not contain electronic equipment which:    (1)    can compute the position of the aircraft in one coordinate system when furnished position information in another coordinate system (namely coordinate conversion equipment);    (2)    is specified in entry IL1565 in Group 3G and    (3)    has been in normal civil use for a period of less than one year   or   (c)   direction finding equipment specially designed for search and rescue purposes and operating at a frequency of 121.5 MHz or 243 MHz, and personal locator beacons operating in this form (which may also have an additional channel selectable for voice mode only); (iii) radio altimeters, the following—
	(a)  pulse modulated	C
	(b)  frequency modulated having a displayed electrical output accuracy better than ±0.914 m over the range bertween 0 and 30.4 m or better than a7plusm;3% above 30.4 m	C
	except standard commercial airborne equipment needed to equip civil aircraft or civil helicopters or as normal standard equipment incorporated in civil aircraft or civil helicopters being exported for civil commercial use, provided such equipment is equivalent in all characteristics and performance to standard equipment of aircraft not specified in entry IL1460 in group 3E, and in which are frequency-modulated radio altimeters which have been in normal civil use for a period of more than one year;
	(c)  frequency modulated which have been in normal civil use for less than one year	C
	(iiia) Technology for radio altimeters referred to in sub-head (b)(1)(ii)(b) above even when excluded from that sub-head	D
	(iv) direction finding equipment operating at frequencies greater tha 5MHz	C
	(v) equipment rated for continuous operation over a range of ambient temperatures extending from below −55°C to above +55°C	C
	(2) Ground and marine equipment for use with airborne navigation equipment utilising the constant velocity or the rectilinear propagation characteristics of electromagnetic waves having a frequency less than 4 × 1014Hz (0.75 micron)	C
	except— ground and marine equipment for use with airborne navigation equipment using the constant velocity or rectilinear propagation characteristics of electromagnetic waves having a frequency less than 5 × 1014Hz (wavelength 0.75 micrometre), provided, in the case of ground equipment, it is for use at civil airports or for civil use in association with civil airborne equipment, and— (1)  is in conformity wityh ICAO standards and assures no function exceeding those resulting from such standards; (2)  is not designed to make use of hyperbolic grids at frequencies greater than 3 MHz;
	(3) ground and marine direction finding equipment operating at frequencies greater than 30 MHz	C
	except— equipment, other than single side band equipment, operating at frequencies up to 157 MHz and employing a loop system or a system employing a number of spaced vertical aerials uniformaly disposed around the circumference of a circle, excluding electronically communicated types;
	(4) timing receivers whose only function is automatically providing time derived from satellite signals to within 1 millisecond of Universal Coordinate time (UCT) or better	C
	(5) ground or marine navigation and geodetic positioning systems designed for use with satellite-provided timing positioning or navigation information	C
	except— equipment which can only be used with TRANSIT satellite systems or other systems not also specified elsewhere in this Schedule, and which is also specified in sub-head (b)(4) above. These shall be excluded from sub-heads (b)(4) and (5) global positioning satellite receivers which have all of the following characteristics:  (1)  capable only of processing the L1 channel (also called the standard Positioning Service (SPS) channel);  (2)  capable of only the Short-Term Code (Coarse Acquisition Code (C/A) code) with short term generation cycle;  (3)  no decryption capabilities;  (4)  including no cesium beam standards; and  (5)  including no null steerable antennae
	(c) Radar equipment and specially designed components, specialised testing, calibrating and training/simulating equipment and specially designed software therefor, the following—
	(1) airborne radar equipment	C
	except— airborne civil weather-radar conforming to international stndards for civil weather radar provided it does not include any of the following characteristics— (a) phased array antennae; (b) frequency agility; (c) spread spectrum; or (d) any signal processing specially designed for tracking of vehicles.
	(2) ground and marine radar equipment, the following—
	(i) equipment operating at a frequency not in normal civil use or at a frequency of more than 10.5 GHz	C
	(ii) equipment operating at a frequency of less than 1.5 GHz and having a peak output power from the transmitter greater than 2.5 MW; or operating at a frequency within the range of 1.5 to 3.5 GHz and having a peak output power from the transmitter greater than 1.5 MW; or operating at a frequency within the range of 3.5 to 6 GHz and having a peak output power from the transmitter greater than 1 MW; or operating at a frequency within the range of 6 to 10 GHz and having a peak output power from the transmitter greater than 500 kW	C
	(iii) equipment operating at a frequency of less than 3.5 GHz and having an 80 per cent or better probability of detection for a 10 sq.m. target at a free space range of 250 nautical miles; or operating at a frequency within the range of 3.5 to 10.5 GHz and having an 80 per cent or better probability of detection for 10 sq.m. target at a free space range of 100 nautical miles	C
	(iv) equipment utilising other than pulse modulation with a constant or staggered pulse repetition frequency, in which the carrier frequency of the transmitted signal is not changed deliberately between groups of pulses, from pulse to pulse, or within a single pulse;	C
	except commercial civil airport radar using a carrier frequency that may change from -pulse to pulse between two fixed frequencies separated in time and in frequency by constant magnitudes
	(v) equipment utilising a Doppler technique for any purposes other than M.T.I. systems using a conventional double or triple pulse delay line cancellation technique	C
	(vi) equipment including any digital signal processing techniques used for automatic target tracking, or having a facility for electronic tracking	C
	(vii) equipment including signal processing techniques (other than those specified in sub head (c)(2)(vi) above, which have been in normal civil use for a period of less than two years)	C
	(viii) equipment ground radar, having been in commercial use for a period of less than one year	C
	There shall be excluded from head (c), secondary radar equipment specially designed for civil air traffic identification and control purposes.
	The following shall be excluded from this entry— (a) equipment assemblies for civil marine automatic radar plotting aids or electronic relative motion analyzers designed to achieve the requirements published by the International Maritime Organization in accordance with the Safety of Life at Sea (SOLAS) converntions, provided the designed tracking speeds do not exceed relative values of greater than 150 knots (77.1 metres/second); (b) ground radar of the hand-held and automobile-mounted type used for vehcle speed monitoring by police authorities and operating in the frequency band 10.5 to 10.55 GHz; In this entry the terms “civil aircraft” and “civil helicopters” include only those types of civil aircraft and civil helicopters which are listed by designation in published airworthiness certification lists by any civil aviation authority to fly commercial civil internal and external routes or for normal civil, private or business use.
IL1502	Communication, detection or tracking equipment of a kind using ultra-violet radiation, infrared radiation or ultrasonic waves, and specially designed components and specially designed software therefor	C
	except— ultrasonic devices which operate in contact with a controlled material to be inspected, or which are used for industrial cleaning, sorting or materials handling, industrial and civilian intrusion alarm, traffic and industrial movement control and counting systems, medical applications, emulsification, homogenisation, or simple educational or entertainment devices; For the purpose of this exception— “simple educational devices” are devices designed for use in teaching basic scientific principles and demonstrating the operation of those principles in educational institutions. underwater ultrasonic communications equipment designed for operation with amplitude modulation and having a communications range of 500 m or less (Sea State 1), a carrier frequency of 40 to 60 kHz and a carrier power supplied to the transducer of 1 W or less; the following equipment— (a) industrial equipment employing cells not specified in the entry IL1548; (b) industrial and civilian intrusion alarm, traffic and industrial movement control and counting systems; (c) medical equipment; (d) industrial and civilian intrusion alarm, traffic and industrial movement control and counting systems; (e) simple educational or entertainment devices which employ photo cells; (f) flame detectors for industrial furnaces; (g) equipment for non-contact temperature measurement for laboratory or industrial purposes utilsing a single detector cell with no scanning of the detector (h) instruments capable of measuring radiated power or energy having a response time constant exceeding 10 ms; (i) equipment designed for measuring radiated power or energy for laboratory, agricultural or industrial purposes using a single detector cell with no scanning of the detector cell assemblies or probes specially designed therefor having a response time constant exceeding 1 microsecond; (j) infrared geodetic equipment, provided that equipment uses a lighting source other than a laser and is manually operated or uses a lighting source (other than a laser or a light emitting diode) remote from the measuring equipment; the following equipment— (a) infrared thermal imaging equipment having all the following characteristics: (1) the detector is a single element; (2) the detector is neither a charge coupled device (CCD) nor an integrate-while-scan device; (3) the detector is either: (i) not cooled; or (ii) cooled by using a liquid nitrogen Dewar vessel; and (4) the equipment is: (i) non-ruggedised, medical equipment; or (ii) has both of the following: (a)  a resolution not exceeding 22,500 resolvable elements; and (b)  a Noise Equivalent Temperature Diofference (NETD) (or temperature sensitivity) of no less than 0.1°C; (b) infrared viewing equipment having all the following characteristics: (1) the detector is a pyroelectric vidicon without reticle; (2) the equipment is designed for fire fighting and buried body detection; and (3) the optimal sensitivity is in the wavelength range from 8 to 14 micrometers Note: This entry includes infra red or ultra-violet sensing devices not specified in Group 1 of this Schedule and which contain image intensifiers specified in entry IL1555 in this Group.
IL1510	Marine or terrestrial acoustic or ultrasonic systems or equipment specially designed for positioning surface vessels or underwater vehicles, or for detecting or locating underwater or subterranean objects or features and specially designed components of such systems or equipment, including but not limited to hydrophones, transducers, beacons, towed hydrophone arrays, beamformers and geophones and specially designed software therefor	C
	except— Marine systems or equipment, the following— (A) active (transmitting, or transmitting and receiving) systems or equipment, including but not limited to depth sounders and fish-finders and their associated beamformers, the following: (1) depth sounders used solely for measuring the depth of water or the distance of submerged or buried objects vertically below the apparatus; (2) horizontally-operated object detection or location systems having all of the following characteristics: (a) transmitting frequency of 15 kHz or greater; (b) sound pressure level less than 250 dB (reference 1 micropascal at 1 metre) for equipment with operating frequency between 15 and 30 kHz, with no decibel limitation for equipment operating at frequencies of 30 kHz or higher; (c) transmission capaability limited to ±10 per cent of the dsign centre frequency; (d) not designed to withstand pressure during normal operation at depths greater than 1,000 metres; (e) displaying a range of 5,000 metres or less; (3) electronic noise sources for vertically directional use only, or mechanical (eg air gun or vapour-shock gun) or chemical noise sources; (4) acoustic systems or equipment for positioning surface vessels or underwater vehicles, provided that: (a) their control capability is limited to release and basic transponder capabilities; (b) they are not capable of processing responses from more than four beacons in the calculation of a single point, and have neither devices nor software for correcting automatically velocity-of-propagation errors for point calculation, nor any coherent signal processing means; (c) they are capable only of operating within a range of less than 1,000 metres or, if capable of operating beyond the range of more than 1,000 metres, are not capable of achieving positional accuracy of better (less) than 20 metres when measured at a range of 1,000 metres; (d) transducers, acoustic modules or hydrophones therefor are not designed to withstand pressure during normal operation at depths greater than 1,000 metres; and (e) beacons therefor are not designed to withstand pressure during normal operation at depths greater than 1,000 metres, do not have oscillators with a stability greater than 10−5 over periods of 24 hours, and do not use complex codes or beamformers which have shaded or formed beams; (B) passive (receiving, whether or not related in normal application to separate active equipment) acoustic hydrophones or transducers having all of the following characteristics: (1) independently mounted or configured and not reasonably capable of assembly by the user into a towed hydrophone array; (2) incorporating sensitive elements made of piezoelectric ceramics or crystal: (a) with a sensitivity no better than −180 dB (referenct 1 volt per micropascal) when not designed for operation at depths of more than 100 m and not acceleration compensated; (b) with a sensitivity no better than −192 dB (reference 1 volt per micropascal) when not designed for operation at depths of more than 100 m; (c) with a sensitivity no better than −204 dB (reference 1 volt per micropascal) when not designed for operation at depths of more than 1000 m. Terrestrial systems or equipment having both the following characteristics— (a) not reasonably capable of conversion by the user to underwater or marine applications specified in this entry; (b) not employing geophones or other transducers specified in this entry. Moving Coil or moving magnet electromagnetic geophones.
IL1514	Pulse modulators capable of providing electric impulses of peak power exceeding 20 MW or of a duration of less than 0.1 microsecond, or with a duty cycle in excess of 0.005; and pulse transformer, pulse-forming equipment or delay lines being specially designed components for such modulators	C
IL1516	Receivers, the following: and specially designed components, accessories and specially designed software therefor—
	(a) Panoramic radio receivers (which search or scan automatically a part of the electromagnetic spectrum and indicate or identify the received signals) except ancillary equipment for commercial receivers with which the frequency searched does not exceed a bandwidth of 20 MHz or does not incorporate a raster or storage display capability	C
	(b) Digitally-controlled radio receivers, whether or not computer controlled, which search or scan automatically a part of the electromagnetic spectrum, in which the switching operation takes less than 10 milliseconds, and which indicate or identify the received signals, except non-ruggedized, digitally-controlled pre-set type radio receivers designed for use in civil communications which have 200 selective channels or fewer	C
	(c) Receivers for spread spectrum and frequency agile systems having a total transmitted bandwidth which is— (1) 100 or more items greater than the bandwidth of any one information channel; and
	(2) in excess of 50 kHz	C
	(d) Receivers which incorporate digital signal processing	C
	except receivers specially designed for internationally allocated civil frequency bands only and where digital signal-processing circuits are not user accessible programmable.
	In this entry— “spread spectrum” means as the technique whereby energy in a relatively narrow-band communication channel is spread over a much wider energy spectrum under the control of a random or pseudo-random bit stream. On receipt, the signal is correlated with the same bit stream to achieve the reverse process of reducing the bandwidth to its original form. By allocating different bit streams to different subscribers transmitting simultaneously, significantly greater use can be made of available bandwidth. “Frequency agility” (or “frequency hopping”) is a system in which the transmission frequency of a single communication channel is made to change by discrete steps under the control of a similar bit stream.
IL1517	Radio transmitters, the following: and specially designed components therefor—
	(a) Transmitters or transmitter-amplifiers designed to operate at output frequencies greater than 960 MHz	C
	(b) Transmitters or transmitter-amplifiers designed to provide any of the following features—
	(1) any system of pulse modulation (this does not include amplitude, frequency- or phase-modulated televisions or telegraphic transmitters or pulse-width modulated sound broadcasting transmitters)—	C
	(2) rated for operation over a range of ambient temperatures extending from below −40°C to above +60°C	C
	(c) Transmitters for spread spectrum and frequency agile systems having a total transmitted bandwidth which is— (1) 100 or more times greater than the bandwidth of any one information channel; and (2) in excess of 50 kHz;
	There shall be excluded from this entry transmitters or transmitter-amplifiers, or systems containing such equipment, accessories and sub-assemblies therefor, with any of the following characteristics— (a) specially designed for medical applications and operating at ISM frequencies; (b) having an output power of not more than 10 W, which are specially designed for— (1) industrial or civil intrusion detection and alarm; (2) industrial and traffic detection, counting, speed measurement, identification and movement control; (3) carrying information from equipment within paragraph (a) or (b) (1) or (b)(2) to this exception or the information from environmental, air or water pollution detection or measurement systems. (c) transmitters using wideband amplifiers designed for non-frequency agile civil applications. For the purposes of this entry “spread spectrum” and “frequency agile” are as defined in entry IL1516 above.
PL7003	Burst transmitters and associated receiving equipment (except simple on-line morse or other data signal convertors or standard items of ADP equipment) and specialised assemblies, sub-assemblies and components therefor	W
	In this entry a “burst transmitter” is any electronic equipment or device for use with radio or other communications systems, whether part of a transmitter or modulation device or ancillary to it, which has a capability to accept and store data (telegraphic, speech or other) and to transmit these at transmission speeds/bit rates which are multiples of the input keying speed/bit rates, the purpose or effect of which is to reduce total message duration time and thus to evade detection by other than the intended recipient.
IL1518	Telemetering and telecontrol equipment suitable for use with aircraft (piloted or pilotless), space vehicles or weapons (guided or unguided), and specially designed test equipment therefor	C
	except equipment specially designed to be used for remote control of toys such as model planes and boats and having electric field strength of not more than 200 microvolts per metre at a distance of 500 metres.
IL1519	Telecommunication transmission equipment and measuring and test equipment, the following: and specially designed components and specifically designed software therefor— (a) Telecommunication transmission equipment employing digital techniques (including the digital processing of analogue signals) and having at least one of the following characteristics— (1) designed for a total digital transfer rate which, at the highest multiplex level, exceeds—
	(a) 45 million bits/s (including when designed for underwater use); or	C
	(b) 8.5 million bit/s for stored programme controlled digital crossconnection equipment	C
	Note: In the case of— (a)  line terminating equipment; (b)  intermediate amplifier equipment; (c)  repeater equipment; (d)  regenerator equipment; or (e)  translation encoders (transcoders);  “90 million bit/s” shall be substituted for “45 million bit/s” in heading (a)(1)(a) above.
	(2) designed for a data signalling rate which exceeds—
	(a) 1,200 bit/s when:	C
	(i)  employing an automatic error detection and correction system; and  (ii)  retransmission is not required for correction;
	(b) 9,600 bit/s when using the bandwidth of one voice channel or	C
	(c) 64,000 bit/s when using baseband	C
	(b) Electronic measuring or test equipment specially designed for the equipment specified in the sub-head (a)(1) above	C
	except— (a) telemetering, telecommand and telesignalling equipmemt designed for industrial purposes, and data transmission equipment not intended for the transmission of written or printed text; (b) facsimile equipment other than the equipment specified in entry IL1527 in this Group; (c) equipment employing exclusively the direct current transmission technique. In this entry— “bandwidth of one voice channel”— in the case of data communication equipment designed to operate in one voice channel of 3,100 Hz, has the same meaning as in CCITT Recommendation G.151; “data signalling rate”— as defined in ITU Recommendation 53–56, taking into account that, for non-binary modulation “baud” and “bit per second” are not equal. Bits for coding, checking and synchronisation functions are to be included; “telecommunication transmission equipment” means one or more of the following items of equipment: (a) (1) line terminating equipment; (2) intermediate amplifier equipment; (3) repeater equipment; (4) regenerator equipment; (5) translation encoders (transcoders); (6) multiplex equipment; (7) modulators/demodulators (modems); (8) transmultiplex equipment (see CCITT Rec. G701); (9) stored programme controlled digital crossconnection equipment; (b) which is designed for use in single or multi-channel communication via: (1) wire (line); (2) coaxial cable; (3) optical fibre cable; or (4) radio.
IL1520	Radio relay communication equipment, specially designed test equipment and specially designed software, the following and specially designed components and accessories therefor—
	(a) Radio relay communication equipment designed for use at frequencies exceeding 960MHz excluding technology excluded from head (c) below	C
	except— (i) microwave radio links for fixed civil installations operating at fixed frequencies not exceeding 19.7 GHz, employing analogue transmission with a capacity of up to 2,700 voice channels of 3 kHz each or of a television channel of 6 MHz maximum nominal bandwidth and associated sound channels; (ii) microwave radio links for fixed civil installations operating at fixed frequencies not exceeding 19.7 GHz, employing digital transmission techniques designed for operation at a total bit rate not exceeding 8.5 million bit/s; (iii) ground communication radio equipment for use with temporarily fixed services operated by the civilian authorities and designed to be used at fixed frequencies not exceeding 15 GHz with a power output of not more than 5 W; (iv) TV-receive-only (TVRO) stations for satellite reception specially designed for use at fixed frequencies meeting ITU standards in civil television or sound radio systems in the following frequency ranges— (1) S-band: 2.5–2.69 GHz (2) C-band: 3.4–4.2 GHz 4.5–4.8 GHz (3) Ku- and Ka-band: 10.7–12.75 GHz (v) equipment specially designed for the transmission of television signals (1)  between camera and studio or between studio and television transmitter; and (2)  not exceeding a line-of-site distance with respect to any one installation; (vi) equipment specially designed to be installed and operated in communication satellite earth stations using— (1)  INTELSAT; (2)  MARISAT; (3)  EUTELSAT; or (4)  INMARSAT;
	(b) Stand-alone radio transmission media simulators/channel estimators and specially designed software therefor, specially designed for testing equipment specified in head (a) above, except those in which the adjustments are only made manually	C
	(c) Technology for equipment specified in head (a) above, employing quadrature amplitude-modulation, (QAM) techniques	D
	except— technology for installation, operation or maintenance.
	(d) Technology for equipment specified in the exception (vi) to head (a) above	D
	except— technology for installation, operation or maintenance.
	There shall be excluded from this entry— equipment for civil television transmission or for general commercial traffic or technology for the installation, maintenance, and operation thereof, provided— (a) the equipment is not designed for operation at a total bit rate exceeding 45 million bits/s; and (b) the equipment does not employ quadrature-amplitude-modulation (QAM) techniques; equipment for civil industrial use including telephone channels for the operation of such networks and the engineering service circuits required for the maintenance of telecommunication links or technology for the installation, maintenance and operation thereof, provided that— (a) microwave radio links employing analogue transmission techniques have a capacity not exceeding 2,700 voice channels of 4 kHz each; (b) microwave radio links employing digital transmission techniques operate a a frequency not exceeding 19.7 GHz and are designed to operate at a total digital bit rate not exceeding 45 million bit/s; and (c) the equipment does not employ quadrature-amplitude-modulation (QAM) techniques.
PL7008	Tropospheric scatter communication equipment using analogue or digital modulation techniques	L, I
IL1521	Solid-state amplifiers the following: and specially designed components and accessories therefor—
	(a) Amplifiers exceeding a maximunm output power of 2 kW at operating frequencies between 10 and 35 MHz inclusive	C
	(b) Amplifiers exceeding a maximum output power of 50 W at operating frequencies between 35 and 400 MHz	C
	(c) Amplifiers where the product of the maximum output power times the maximum operating frequency is more than 2 × 1010 WHz at operating frequencies above 400 MHz	C
	except solid state amplifiers which— are specially designed for community television distribution systems; or have a bandwidth of 10 MHz or less. In this entry “bandwidth” means the range of freuencies over which the power amplification does not drop to less than one half of its maximum value.
IL1522	Lasers and equipment containing lasers, the following—
	(a) Lasers, and specially designed components therefor, including amplification stages	C
	except, save when specially designed for equipment specified in head (b) below, the following— (i) argon, krypton or non-tunable dye lasers having one of the following sets of characteristics— (1) an output wavelength between 0.2 to 0.8 micrometre, a pulsed output energy not exceeding 0.5 joule per pulse and an average or continuous wave maximum rated single- or multi-mode output power not exceeding 20W; or (2) an output wavelength between 0.8 and 1.0 micrometre, a pulsed output energy not exceeding 0.25 joule per pulse and an average or continuous wave maximum rated single- or multi-mode output power not exceeding 10 watts; (ii) helium-cadmium, nitrogen and multigas lasers not elsewhere specified in this head with both of the following characteristics— (1) an output wavelength shorter than 0.8 micrometre; (2) a pulsed output not exceeding 0.5 joule per pulse and an average or continuous-wave maximum rated single- or multi-mode output power not exceeding 120 watt; (iii) helium-neon lasers with an output wavelength shorter than 0.8 micrometre; (iv) ruby-lasers with both of the following characteristics— (1) an output wavelength shorter than 0.8 micrometre; (2) an energy output not exceeding 20 joules per pulse; (v) CO2, CO or CO/CO2 lasers having either of the following characteristics— (1) an output wavelength in the range of 9 to 11 micrometres and a pulsed output energy not exceeding 2 joules per pulse and a maximum rated average single- or multi-mode output power not exceeding 1.2 kW or a continuous-wave maximum rated single- or multi-mode output power not exceeding 5.0 kW; or (2) an output wavelength in the range of 5 to 7 micrometres and having a continuous-wave maximunm rated single- or multi-mode output power not exceeding 50 watts; (vi) Nd:YAG lasers having an output wavelength of 1.064 micrometres with any of the following characteristics— (1) a pulsed output not exceeding 0.5 joule per pulse and maximum rated average single- or multi-mode output power not exceeding 10 watts or a continuous-wave maximum rated single- or multi-mode output power not exceeding 50 watts; (2) a pulsed output not exceeding 10 joules per pulse with a pulse width not less than 50 microseconds and a maximum rated average single- or multi-mode output power not exceeding 50 watts; (3) a pulsed output not exceeding 1.5 joules per pulse, a maximum rated average single- or multi-mode output power not exceeding 25 W, and used for pumping tunable pulsed dye lasers specified in (ix) below; (vii) Nd:Glass lasers with both of the following characteristics— (1) an output wavelength in the range of 1.05 to 1.06 micrometres; and (2) a pulsed output not exceeding 2 joules per pulse; (viii) tunable CW dye lasers, with both of the following characteristics— (1) an output wavelength shorter than 0.8 micrometre; and (2) an output not exceeding an average or continuous-wave maximum rated single- or multi-mode output power of 1 W; (ix) tunable pulsed lasers (for argon and krypton lasers, see exception (i) to head (a) above), including dye, having all of the following characteristics— (1) an output wavelength between 0.15 and 0.8 micrometre; (2) a pulse duration not exceeding 100 nanoseconds; (3) a pulsed output energy not exceeding 0.5 jule per pulse; and (4) an average power not exceeding 10 watts; (x) single-element semiconductor lasers with a wavelength shorter than 1 micrometre designed for, and used in, equipment excluded by paragraph (xiii), (xiv), (xix) or (xx) to head (b) below; (xi) secmiconductor lasers having— (1) an output wavelength no longer than 1,000 nm; and (2) a continuous wave (CW) output power not exceeding 100 mW; (xii) uncooled, unsegmented mirrors with glass or dielectric substrates for use as end reflectors for laser resonators;
	(b) Equipment containing lasers, and specially designed components therefor	C
	except the following equipment containing lasers of the types excluded from head (a) above— (i) specially designed for industrial and civilian intrusion detection and alarm systems; (ii) specially designed for medical applications; (iii) equipment for educational and laboratory purposes; (iv) specially designed for traffic and industrial movement control and counting systems; (v) specially designed for detection of environmental pollution; (vi) optical spectrometers and densitometers; (vii) equipment containing continuous-wave helium-neon gas lasers (but see head (c) below); (viii) textile-cutting and textile-bonding equipment; (ix) paper-cutting equipment; (x) equipment containing lasers for drilling diamond dies for the wire drawing industry; (xi) electronic scanning equipment with auxiliary electronic screening unit specially designed for printing processes, including such equipment when used for the production of colour separations; (xii) laser-radar (lidar) equipment specially designed for surveying or meteorological observation; (xiii) consumer-type reproducers for video and audio discs, employing non-erasable media; (xiv) price scanners (point of sale); (xv) equipment designed for surveying purposes, provided there is no capabiity of measuring range; (xvi) equipment specially designed for the marking of components; (xvii) specially designed gravure (printing plate) manufacturing equipment; (xviii) equipment specially designed for visual entertainment purposes (laser light shows) provided it has no holographic capability; (xix) electronic printers, including those capable of being used with digital computers, which have a capacity not exceeding 2,000 lines (30 pages) per minute or 300 characters per second; (xx) electronic copiers, including those capable of being used with digital computers, which have a capacity not exceeding 30 pages per minute and which do not include any of the following— (1) Optical Character Recognition (OCR) equipment which is not excepted from control by exception (h)(2)(iv)(k) of the entry IL1565 in Group 3G; (2) digitising equipment which is not excepted from control by exception (h)(2)(iv)(b) in the entry IL1565 in Group 3G; (3) image enhancement capability;
	(c) Measuring systems which have both of the following characteristics	C
	(i) contain a laser; and (ii) maintain for at least 48 hours, over a termperature range of ±10K around a standard temperature and at a standard pressure— (1) a resolution over their full scale of ±0.1 micrometre or better; and (2) an accuracy of ±1 part per million or better;
	(d) Particle measuring systems employing helium-neon lasers, designed for measuring particle size and concentration in gases, which have both of the following characteristics—	C
	(i) capable of measuring particle sizes of 0.3 micrometre or less; and (ii) capable of characterising Class 10 clean air or better.
	In this entry— “tunable” refers to the ability of a laser to produce an output at any wavelength within its tuning range. A line-selectable laser which can operate only on discrete wavelengths is not tunable. the term “specially designed components” includes active and passive components in semi-fabricated forms as well as in fabricated forms; a “laser” is an assembly of components designed to produce a coherent light which is amplified by stimulated emission of radiation; “equipment containing lasers” means that the equipment uses coherent light for a certain application.
IL1526	Optical fibres, optical cables and other cables and components and accessories, the following—
	(a) Unarmoured or single-armoured ocean cable having an attenuation of 1.62 dB/km (3.0 kB per nautical mile) or less, measured at a frequency of 600 kHz	C
	(b) Optical-fibre communication cable or optical fibres therefor, having any of the following characteristics—
	(1) the optical fibre is designed for single mode light propagation	C
	(2) the optical fibre— (i) is designed for multimode light propagation; and
	(ii) has an attenuation of less than 1.0 kB/km at a wavelength of 1300 nm	C
	(3) the optical fibre is capable of withstanding a proof test tensile strength of 1.1 × 109 N/m2 or more	C
	(4) the optical fibre is specially designed for underwater use or	C
	(5) the optical fibre is specially designed to be insensitive to nuclear radiation	C
	(c) Optical fibres for sensing purposes, having any of the following characteristics—
	(1) specially fabricated either compositionally or structurally, or modified by coating to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive	C
	(2) modified structurally or by coating to have either— (i) a beat length of more than 50 cm (low birefringence), except if designed for operation at wavelengths of less than 650 nm; or
	(ii) a beat length of less than 5 cm (high birefringence)	C
	(d) Secure communication cable, being either coaxial or multiconductor communication cable protected by mechanical or electrical means from physical damage or intrusion in such a manner that communications security is maintained between terminals without the necessity for encryption	C
	except cable which is armoured only by either a tough outer sheath or by an electromagnetic screen
	(e) Components and accessories specially designed for the optical fibres or cable specified in this entry including fibre-optic bulkhead or hull penetration connectors impervious to leakage at any depth for use in ships or vessels, and multiport fibre-optic couplers (including T, star, bidirectional and wavelength division multiplexing and demultiplexing couplers)	C
	except connectors for use with optical fibres or cable with a repeatable coupling loss of 0.5 dB or more.
	In this entry— “beat length” means the distance, over which two orthogonally polarised signals, initially in phase, must pass in order to achieve 2 Pi radian(s) phase difference; “proof test” consists of on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0.5 to 3 m length of fibre at a running rate of 2 to 5 m/s while passing between capstans approximately 15 cm in diameter. The ambient temperature is a nominal 20°C and relative humidity 40%
IL1527	Cryptographic equipment designed to ensure secrecy of communications (such as telegraphy, telephony, facsimile, video, and data communications) or of stored information; and specially designed components therefor, and software controlling or computers performing the functions of such cryptographic equipment	C
	except simple cryptographic devices or equipment ensuring only the privacy of communications, the following— (a) equipment for voice transmission making us of fixed frequency inversions of fixed band scrambling techniques in which the transposition changes occur not more frequently than once every 10 seconds; (b) standard civil facsimile and video equipment designed to ensure the privacy of communications by an analogue transmission using non-standard practices for intended receivers only (video system equipment effecting the transposition of analogue data); (c) video systems for pay televsion and similar restricted audience television, including industrial and commercial television equipment using other than standard commercial sweep systems. Note 1. This entry includes video systems which, for secrecy purposes, use digital techniques (conversion of an analogue, ie video or facsimile signal into a digital signal). Note 2. Digital computers and digital differential analysers (incremental computers) designed or modified for, or combined with, any cypher machines, cryptographic equipment devices or techniques including software, microprogramme control (firmware).
IL1529	Electronic equipment and instruments for testing, measuring (e.g. time interval measurement), calibrating or counting, or for microprocessor/microcomputer development, the following: and specially designed software therefor— (a) Equipment, the following— (1) equipment designed as reference frequency standards for laboratory use and having either of the following characteristics—
	(i) a long-term drift (ageing) over 24 hours or more of 1 part in 1010 or better	C
	or
	(ii) a short-term drift (stability) over a period from1 to 100 seconds of 1 part in 1012 or better	C
	(2) equipment containing frequency standards having any of the following characteristics—
	(i) designed for mobile use and having a long-term drift (ageing) over 24 hours or more of 1 part in 109 or better	C
	(ii) designed for fixed ground use and having a long term drift (ageing) over 24 hours or more of 5 parts in 1010 or better or	C
	(iii) a short-term drift (stability) over a period from 1 to 100 seconds of 1 part in 1012 or better	C
	(b) Instruments, the following—
	(1) instruments designed for use at frequencies exceeding 18 GHz	C
	(2) comb frequency generators designed and rated for use at frequencies exceeding 12.5 GHz	C
	(3) instruments designed for use at frequencies exceeding 1 GHz, the following—
	(i) swept-frequency network analyzers for the automatic measurement of complex equivalent circuit parameters over a range of frequencies	C
	(ii) specially calibrated microwave instrumentation receivers capable of measuring amplitude and phase simultaneously	C
	(iii) automatic frequency (heterodyne) converters and transfer oscillators	C
	(iv) instruments in which the functions can be controlled by the injection of digitally-coded electrical signals from an external source	C
	(4) instruments having both of the following characteristics—	C
	(i) user-accissible programmability, and (ii) a user-alterable programme and data storage of more than 65,536 bit except either of the following types— (1)  instruments where the user-accessible programmabillity is limited to— (a)   the replacement of fixed storage devices (e.g. ROMs) which are not specified in this Schedule; or (b)   the selection of pre-programmed functions from a menu;  or (2)  instruments which— (a)   have been designed for nonstrategic use and by nature of design, software mocroprogramme control, specialised logic control (hardware) or performance are substantially restricted to the particular application for which they have been designed; and (b)   are not specified elsewhere in this entry.
	(5) test instruments with user-accessibile programmability and having any of the following characteristics—
	(i) specially designed to examine or compare one or more binary coded streams of electrical signals	C
	(ii) a maximum sampling rate of more than 100 MHz	C
	(iii) a maximum of more than 32 channels excluding a maximum of 6 qualifier channels	C
	(iv) a figure of merit of more than 400	C
	(v) a capability of state coupled timing analysis (ie synchronized mode state/timing analysis)	C
	(vi) a total acquisition memory for word storage exceeding 32,768 bit with an acquisition memory for bit storage per channel exceeding 1,024 bit;	C
	or
	(vii) a total acquisition memory for word storage exceeding 16,384 bit with an acquisition memory for bit storage per channel exceeding 2,024 bit	C
	except— (a) logic probes, logic pulsers, digital current tracers (current sniffers), signature analysers and other digital circuit testers for observing single events or providing stimuli at single test points; (b) logic clips and logic comparators; (c) digital word generators capable of operating at a maximum clock rate of 2 MHz or less with word lengths of 8 bit or less;
	(6) microprocessor or microcomputer development instruments or systems, capable of developing software for, or capable of, programming microcircuits specified in the entry IL 1564 in this Group	C
	except— microprocessor or microcomputer development instruments or systems which can be used to develop software for, or to programme, a family of microprocessor microcomputer microcircuits not designed or produced in a country listed in Schedule 2 provided that— (a)  the instruments or systems can be used only for microprocessor or microcomputer microcircuits having an operand (data) word length of less than or equal to 8 bit and not having an arithmetic logic unit (ALU) wider than 8 bit; and (b)  the family contains at least one microprocessor or microcomputer microcircuit and which is not specified in the entry IL 1564 in this Group.
	(c) Digital counters, the following—
	(1) those capable of counting successive input signals with less than 5 nanoseconds time difference without prescaling (digital division) of the input signal	C
	Note: for counters or timers having a time interval measurement mode see also head (d) below
	(2) those employing prescaling of the input signal, in which the prescaler is capable of resolving successive input signals with less than 1 nanosecond time difference	C
	(3) those capable of measuring burst frequencies exceeding 100 MHz for a burst duration of less than 5 milliseconds	C
	(d) Time interval measuring equipment employing digital techniques, capable of measuring time intervals of less than 5 nanoseconds on a single shot basis	C
	(e) Testing equipment rated to maintain specified operating data when operting over a range of ambient temperatures from below −25°C to above +55°C	C
	(f) Digital voltage measuring apparatus, with or without electrical outputs, irrespective of the physical units in which calibrated, with a reading speed (from zero to the measured value) faster than 25 accesses per second and having any of the following characteristics—
	(1) a digital resolution at all points on the scale greater than one part in 200,000	C
	(2) an accuracy, measured without reference to an external standard, better than 1 part in 50,000 (0.002%) of reading over an ambinet temperature range of ±5°C or more, or a stability better than 10−6 of reading over a period of 24 hours or more	C
	(3) capable of more than 500 independent measurements per second	C
	except— (a) visual quantization apparatus capable pof providing an average value, displayed or not, of the results of the measurement; (b) multichannel analyzers of all types used in nuclear experimentation; (c) industrial telemeasuring devices in which a pre-set storage value is used as a basis for measuring.
	(g) Transient recorders, utilizing analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single input signals at successive intervals of less than 50 nanoseconds	C
	In this entry— a “family” means a group of microprocessor or microcomputer microcircuits which have: (a) the same architecture; (b) the same basic instruction set; and (c) the same basic technology (e.g. only NMOS or only CMOS); “figure of merit” means the product of the maximum sampling rate in MHz and the number of input channels excluding qualifier channels; “manufacturer” means the individual or organisation designing the instrument for the intended application (in contrast to an individual or organisation merely programming an instrument at, or in accordance with, a user’s request); “comb frequency generators” means devices which generate a spectrum of harmonics; “swept-frequency network analyzers” means the automatic measurement of equivalent circuit parameters over a range of frequencies. This involves swept-frequency measurement techniques but not CW point-to-point measurements; “amplitude and phase receivers” means instruments capable of measuring the amplitude of a microwave signal or the amplitude of two microwave signals and the relative phase between them. (The principal application of these instruments is the measurement of near and far zone phase and amplitude antenna patterns. They can also be used for measurement of microwave device and components characteristics. In general, they are more sophisticated and sensitive (better than −100 dBm) than phase and impedance measuring instruments such as RF vector impedance meters and vector voltmeters. They also feature wide dynamic range (80 dB) and very good linearity (approximately ±0.25 kB).); “frequency (heterodyne) converters” means instruments which down convert an unknown frequency by mixing with an accurately known frequency. The accurately known frequency is developed by multiplication of a crystal-derived reference which is passed through a harmonic generator. By mixing the appropriate harmonic and the unknown frequencies, an accurate third frequency results; “transfer oscillators” means instruments which can be based on the property of harmonic mixing. Differences exist in that a local oscillator is utilized whereas a crystal-derived reference frequency is utilized in the case of heterodyne converters. The unknown frequency is mixed with the local oscillator (LO) and the two are phase-locked by tuning the LO. The LO can then be measured by a counter; “user-accessible programmability” means the facility allowing a user to insert, modify or replace programmes by means other than: (a) a physical change in wiring or interconnections; or (b) the setting of function controls including entry of parameters; “burst frequency measurement” counters contain special gating circuits which start only when the input signal is present and stop counting at the completion of the burst; “pulse frequency profiling” means the capability of measuring the changes of frequency (or phase) within a pulse as a function of time; such changes in frequency would be present in a transmitted pulse-compression radar pulse (“chirp radar”). This profiling may be achieved by internal or external gating. Pulse frequency profiling does not include frequency modulation tolerance while it is being frequency modulated.
IL1531	Frequency synthesizers and equipment containing such frequency synthesizers, and specially designed components and accessories therefor, the following—
	(a) Frequency synthesizers containing frequency standards specified in head (a) in the entry IL 1529 in this Group or temperature-compensated crystal oscillators specified in head (c) to the entry IL 1587 in Group 3G	C
	(b) Instrument frequency synthesizers and synthesized signal generators, and specially designed components and accessories therefor, designed for ground use, producing output frequencies whose accuracy and short and long-term stability are controlled by, derived from, or disciplined by the input frequency or internal master standard frequency, and having any of the following characteristics—
	(1) a maximum synthesized output frequency of more than 550 MHz	C
	(2) any of the following noise characteristics—
	(i) a single sideband (SSB) phase noise better than −120 dBc/Hz when measured at a 20 kHz offset from the carrier frequency	C
	(ii) a single sideband (SSB) phase noise better than −106 dBc/Hz when measured at a 100 Hz offset from the carrier frequency	C
	(iii) an integrated phase noise better than −60 dBc/Hz referred to a 30 kHz band centred on the carrier and excluding ths 1 Hz band centred on this carrier or	C
	(iv) an integrated AM phase noise better than −70 dB/Hz referred to a 30 kHz band centred on the carrier and excluding the 1 Hz band centred on this carrier	C
	except— synthesized signal generators specified in sub-heads (b)(1) or (b)(2)(i) above having a maximum synthsized output frequency of 1,400 MHz or a single sideband phase noise of not less than −136 kBc/Hz when measured at an offset of 20 kHz from a carrier frequency of 100 MHz, provided the technology supplied is the minimum necessary for the use of such generators.
	(3) electrically programmable in frequency (in that the output frequency can be controlled or selected by the injection of digitally coded electrical signals from an external control source) with a frequency switching time of less than 10 milliseconds	C
	(4) electrically programmable in phase (in that the phase of the output frequency can be varied relative to the internal or external reference standard, or selected in accordance with an externally supplied code or signal with a switching speed from one selected phase value to another of less than 10 milliseconds) except equipment incorporating pre-emphasis networks for frequency modulation	C
	(5) having a level of spurious components in the output, measured relative to the selected output frequency better than;
	(i) −60 dB harmonic; or	C
	(ii) −92 kB non-harmonic	C
	(6) having more than three different selected synthesized output frequencies available simultaneously from one or more outputs	C
	(7) with facilities for pulse modulation of the output frequency	C
	(c) Airborne communication equipment using frequency synthesizers, the following: and specially designed components and accessories therefor—
	(1) equipment designed to receive or transmit frequencies greater than 156 MHz	C
	(2) equipment incorporating facilities for the rapid selection of more than 200 channels per equipment, except equipment operating in the frequency range of 108 to 137 MHz incorporating facilities for the rapid selection of 760 channels or fewer at not less than 25 kHz channel spacing, which have been in normal civil use for at least one year	C
	(3) equipment with a frequency switching time of less than 10 milliseconds	C
	(4) frequency synthesizers, designed for airborne communication equipment, whether supplied separately or with the said equipment, exceeding any of the parameters referred to in head (b) above	C
	(d) Digitally-controlled radio receivers, whether or not computer-controlled, which search or scan automatically a part of the electromagnetic spectrum, using frequency synthesizers, the following and specially designed components and accessories therefor—
	(1) digitally-controlled receivers in which the switching operation takes less than 10 milliseconds, (except non-ruggedized digitally-controlled preset type radio receivers designed for use in civil communications, which have 200 selective channels or fewer)	C
	(2) frequency synthesizers designed for digitally controlled radio receivers whether supplied separately or with the said receiver, exceeding any of the parameters in head (b) above	C
	except those specially designed for receivers excepted from sub-head (d)(1) above or those specially designed for use in tuners for entertainment type receivers.
	(e) Radio transmitters incorporating transmitter drive units, exciters and master oscillators using frequency synthesis, the following: and specially designed components and accessories therefor—
	(1) those having an output frequency of up to 32 MHz with a frequency resolution of better than 10 Hz and with a frequency switching time of less than 10 milliseconds	C
	(2) those having an output frequency from 32 MHz to 235 MHz with a frequency resolution of better than 250 Hz and with a frequency switching time of less than 10 milliseconds	C
	(3) those having an output frequency of more than 235 MHz	C
	except— (i) television broadcasting transmitters having an output frequency from 470 MHz to 960 MHz with a frequency resolution of not better than 1 kHz and where the manually-operated frequency synthesizer incorporated in or driving the transmitter has an output frequency not greater than 120 MHz; (ii) FM and AM ground communication equipment for use in the land mobile service and operating in the 420 to 470 MHz band, with a power output of 50 W or less for mobile units and 300 W or less for fixed units, with a frequency resolution of not better than 6.25 kHz and with a frequency switching time of more than 50 milliseconds; (iii) portable (personal) or mobile radiotelephones for civil use, eg for use with commercial civil cellular radiocommunications systems having all of the following characteristics— (a) operating in the 420 to 960 MHz range; (b) a power output of 25 W or less; and (c) a frequency switching time of 10 ms or more.
	(4) those having more than three different selected synthesized output frequencies available simultaneously from one or more outputs	C
	(5) those with facilities for pulse modulation of the output frequency of the transmitter or of the incorporated frequency synthesizer	C
	(6) those frequency synthesizers designed for the above equipment, whether supplied separately or with the said equipment, exceeding any of the parameters referred to in head (b) above	C
	There shall be excluded from this entry— equipment in which the output frequency is produced by the addition or subtraction of two or more crystal oscillator frequencies which may be followed by multiplication of the result. In this entry— “frequency synthesiser” means any kind of frequency source or signal generator, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies; “frequency switching time” means the maximum time (ie delay), when switched from one selected output frequency to another selected output frequency, to reach: (a) a frequency within 100 Hz of the final frequency; or (b) an output level within 1.0 dB of the final output level.
PL7013	Transceivers having an output frequency of up to 32 MHz and using frequency synthesis with a frequency resolution of 10 Hz or better	X
	In this entry “transceiver” means equipment which comprises a radio transmitter and a radio receiver and which uses part or all of the same circuitry in both transmit and receive modes.
IL1532	Precision linear and angular measuring systems, the following: and specifically designed components and specially designed ODMA software therefor— (a) Contact-type systems and linear voltage differential transformers (LVDT) therefor, the following—
	(1) contact type measuring systems having all of the following characteristics—	C
	(i) range equal to or less than 5 mm; (ii) linearity equal to or better than ±0.1 per cent; and; (iii) drift equal to or less than 0.1 per cent per day at a standard ambient test room temperature ±1K;
	(2) linear voltage differential transformers with no compensation networks and having either of the following characteristics—
	(i) range equal to or less than 5 mm	C
	or
	(ii) linearity equal to or better than ±0.2 per cent	C
	(b) Linear measuring machines having all of the following characteristics—	C
	(1) two or more axes; (2) range in any axis greater than 200 mm; (3) accuracy (including any compensation) better than ±0.0008 mm per any 300 mm segment of travel; except optical comparators.
	(c) Angular measuring systems having an accuracy equal to or better than ±1 second of arc	C
	except optical instrument, such as autocollimators, using collimated light to detect angular displacements of a mirror
	(d) Non-contact type measuring systems having, at a standard ambient test room temperature ±1K, either of the following pairs of characteristics—
	(1) effective probe measurement diameter less than 0.5 mm and drift less than 0.5 per cent per day	C
	or
	(2) linearity better than ±0.3 per cent and drift less than 0.5 per cent per day	C
	(e) Contact type measuring systems specially designed for combined, simultaneous linear-angular inspection of hemishells, having both the following characteristics—	C
	(1) linear accuracy equal to or better than ±0.005 mm in any 5 mm; and (2) angular accuracy equal to or better than ±1 minute in any 90° of arc.
	In this entry— “accuracy” means the maximum deviation, positive or negative, of an indicated value from an accepted standard or true value; “linearity” means the maximum deviation of the actual characteristics (average of upscale and downscale readings), positive or negative, from a straight line so positioned as to equalise and minimise the maximum deviations.
IL1533	Signal analysers (including spectrum analysers), having any of the following characteristics: and specially designed components, accessories and specially designed ODMA software therefor—
	(a) Non-programmable and capable of operating at frequencies over 12.5 GHz	C
	(b) Programmable and capable of operating at frequencies over 1 GHz	C
	(c) Having a display bandwidth in excess of 125 MHz	C
	(d) Including a scanning preselector for analyzing frequencies of more than 1 GHz	C
	(e) Incorporating a tracking signal generator for analyzing frequencies of more than 1 GHz	C
	(f) Radio frequency analysis having an overall display dynamic range of better than 80 dB	C
	(g) Employing time compression of the input signal	C
	(h) Employing fast fourier Transform techniques	C
	except (1) optical spectrum analysers; (2) instruments specified only in head (c) above provided that the instruments are not capable of operating at frequencies over 2 GHz.
IL1534	Flatbed microdensitometers (except cathode-ray types), having any of the following characteristics: and specially designed components therefor—
	(a) A recording or scanning rate exceeding 5,000 data points per second	C
	(b) A figure of merit better (less) than 0.1, defined as the product of the density resolution (expressed in density units) and the spatial resolution (expressed in micrometres)	C
	except equipment with a spatial resolution not better (less) than 2 micrometres and a density resolution not better (less) than 0.01 density unit
	(c) An optical density range greater than 0 to 4	C
	Note: Density resolution expressed in density units is measured over the optical density range of the instrument.
IL1537	Microwave (including millimetric wave) equipment, including parametric amplifiers capable of operating at frequencies over 1 GHz the following: (other than microwave equipment specified in the entries IL1501, IL1517, IL1520 and IL1529 in this Group)—
	(a) Rigid and flexible waveguides designed for use at frequencies in excess of 18 GHz	C
	(b) Waveguides having a bandwidth ratio greater than 1.7:1	C
	(c) Waveguide components, the following—
	(1) directional couplers having a bandwidth ratio greater than 1.7:1 and directivity over the band of 20 dB or more	C
	(2) rotary joints capable of transmitting more than one isolated channel or having a bandwidth greater than 5 per cent of the centre mean frequency, except those used in air traffic control equipment carrying combinations of frequencies suitable for secondary surveillance radar antennae co-mounted on a primary radar antenna and which do not have a bandwidth exceeding 5 per cent of the centre mean frequency	C
	(3) magnetic, including gyro-magnetic, waveguide components	C
	(4) diode waveguide components using diodes specified in the entry IL1544 in this Group	C
	(d) Transverse electromagnetic mode (TEM) devices the following—
	(1) those using magnetic, including gyro-magnetic, properties;	C
	or
	(2) those using diodes specified in the entry IL1544 in this Group	C
	(e) Transmit Receive (TR) and anti-TR) tubes and specially designed components therefor, except those designed for use in waveguides and which are in normal civil use for ground marine radar and having any of the following characteristics—	C
	(i) they operate at a peak power not exceeding 3 MW and at a frequency of 1.5 GHz or less; (ii) they operatre at a peak power not exceeding 1.2 MW and at a frequency over the range of 1.5 to 6 GHz; (iii) they operate at a peak power not exceeding 300 kW and at a frequency over the range of 6 GHz to 10.5 GHz.
	(f) Assemblies and sub-assemblies in which the isolating base material functions as a dielectric (as used in stripline, microstrip, or slotline) except for those items specifically designed for use in civil television systems to meet ITU standards and using as an isolating material paper base phenolics, glass cloth melamine, glass cloth epoxy resin, polyethylene terephthalate or other isolating material with an operating temperature not exceeding 150°C	C
	(g) Phased array antennae and sub-assemblies, designed to permit electronic control of beam shaping and pointing and specially designed components therefor including but not limited to duplexers, phase shifters and associated high-speed diode switches	C
	except— duplexers and phase shifters specifically designed for use in civil television systems or in other civil radar or communication systems not specified elsewhere in this Schedule.
	(h) Other antennae specially designed for operation at frequencies above 30 GHz having a diameter of less than 1 metre, and specially designed components therefor	C
	(i) Microwave assemblies and sub-assemblies capable of being used at frequencies above 3 GHz and having circuits fabricated by the same processes used in integrated circuit technology, which include active circuit elements	C
	(j) Microwave assemblies and sub-assembles which contain band-pass or band-stop filters and are capable of operating at 3 GHz or greater	C
	except microwave assemblies, sub-assemblies or amplifiers or combinations therefor and technology for the use thereof, having all of the following characteristics— (a) fixed tuned at the time of manufacture to operate only within the ITU satellite broadcasting band from 11.7 to 12.5 GHz; (b) not capable of being retuned to a new frequency band by the user; and (c) specially designed for use with, or in, civil television receivers
	(k) Amplifiers	C
	except— (1) parametric or paramagnetic amplifiers having any of the following characteristics— (i)  they are specially designed for medical applications; (ii)  they are specially for use in simple educational devices and operate at industrial, scientific or medical (ISM) frequencies; or (iii)  they have an output power of not more than 10 W and are specially designed for: (a)   industrial or civilian instrusion detection and alarm systems; (b)   traffic or industrial movement control and counting systems; (c)   environmental pollution air or water detection systems; (8) microwave assemblies, sub-assemblies or amplifiers or combinations therefor, having all of the following characteristics and technology for the use thereof— (a)   fixed tuned at the time of manufacture to operate only within the ITU satellite broadcasting band from 11.7 to 12.5 GHz; (b)   not capable of being returned to a new frequency band by the user; and (c)   specially designed for use with, or in, civil television receivers; (d)   simple educational devices
	(l) Modulators using PIN (positive-intrinsic-negative) transistor technology	C
	In this entry “simple educational devices” are devices designed for use in teaching basic scientific principles and demonstrating the operation of those principles in educational institutions.
IL1541	Cathode-ray tubes having any of the following characteristics—
	(a) A resolving power of 32 lines per mm or more, using the shrinking raster method of measurement	C
	(b) With travelling wave or distributed deflection structure using delay lines, or incorporating other techniques to minimise mismatch of fast phenomena signals to the deflection structure, except when using segmented plate (sectioned Y-plate) structure	C
	(c) Incorporating microchannel-plate electron multipliers;	C
	except— cathode-ray tubes having all of the following characteristics— (i) the microchannel plate electron multipliers have a hole pitch of 25 micrometres or more; (ii) the tubes are not ruggedised for military use; (iii) the tubes have a horizontal sweep slower than 200 ns/cm; and (iv) the electron gun is mounted parallel to the screen surface.
	(d) Technology for the design or production of microchannel electron multipliers specified in head (c) above	D
IL1542	Cold cathode tubes and switches, the following—
	(a) Triggered spark-gaps, having an anode delay time of 15 microseconds or less and rated for a peak current of 3,000 A or more; specially designed parts therefor, and equipment incorporating such devices except cold cathode relay tubes or decade counter tubes	C
	(b) Cold cathode tubes (other than ignitrons) whether gas-filled or not, operating in a manner similar to a spark gap, containing three or more electrodes and having all the following characteristics—	C
	(1) rated for an anode peak voltage of 2,500 volts or more; (2) rated for peak currents of 100A or more; (3) having an anode delay time of 10 microseconds or less; and (4) having an envelope diameter of less than 25.4 mm.
	In this entry “triggered spark-gaps” are tubes with a structure consisting of two opposed anodes with shapes resembling flattened hemispheres, and with one or more triggering probes placed approximately in the centre of one anode. The structure is sealed and contains a mixture of gases, principally nitrogen, under less than atmospheric pressure.
IL1544	Semiconductor diodes, the following: and dice and wafers therefor—
	(a) Semiconductor diodes, designed or rated for use at input or output frequencies exceeding 12.5 GHz	C
	(b) Mixer and detector diodes designed or rated for use at input or output frequencies greater than 3 GHz	C
	except— (i) point contact diodes designed or rated for use at input or output frequencies of 12.5 GHz or less; (ii) Schottky diodes designed or rated for mixed use at input or output frequencies of less than 12.5 GHz and having a noise figure of more than 6.5 dB; (iii) Schottky diodes designed or rated for detector use at input or output frequencies of less than 12.5 GHz and having a minimum rated tangential sensitivity of either worse than −45 dBm under unbiased conditions or worse than −50 dBm under biased conditions.
	(c) Oscillator and amplifier devices such as Gunn, Impatt, Trapatt, TED and LSA, including those used for the direct conversion of dc to rf power, designed or rated for use at either—
	(1) output frequencies above 1 GHz but not exceeding 4 GHz with a peak power more than 2 W or a maximum CW power more than 200 mW	C
	or
	(2) output frequencies above 4 GHz but not exceeding 12.5 GHz with a peak power more than 1 W or a maximum CW power more than 100 mW	C
	(d) Voltage variable capacitance diodes designed or rated for use at input or output frequencies greater than 1.6 GHz	C
	(e) Fast recovery diodes, the following—
	(1) having a rated maximum reverse recovery time of less than 1 nanosecond	C
	(2) having both a rated forward rectified current over 5 A and a rated maximum reverse recovery time of less than 20 nanoseconds	C
	(f) PIN diodes designed or rated for use at input or output frequencies above 1.7 GHz, with a peak power of greater than 5 W or a maximum CW power of greater than 500 mW	C
	There shall be excluded from this entry semiconductor diodes based upon germanium, selenium or copper oxide
IL1545	Transistors, the following and dice and wafers therefor— (a) Transistors based upon silicon and having any of the following characteristics—
	(1) an operating frequency exceeding 1.5 GHz	C
	(2) an operating frequency not exceeding 1.5 MHz and a maximum collector dissipation of more than 300 W	C
	(3) an operating frequency exceeding 1.5 MHz and a maximum collector dissipation of more than 250 W	C
	(4) an operating frequency exceeding 200 MHz and a product of operating frequency (in GHz) times the maximum collector dissipation (in watts) of more than 10; or	C
	(5) being majority carrier-type transistors, including but not limited to junction field-effect transistors (FETs) and metal-oxide semiconductor transistors (MOS)	C
	except field-effect transistors having any of the following characteristics— (a) a maximum power dissipation of no more than 6 W and an operating frequency not exceeding 1.0 GHz; (b) a maximum power dissipation of no more than 1 W and an operating frequency not exceeding 2.0 GHz; (c) designed for audio frequency applications
	(b) Transistors based upon gallium arsenide and having any of the following characteristics—
	(1) an operating frequency exceeding 1 GHz	C
	(2) a maximum power dissipation of more than 1 W; or	C
	(3) a noise figure of less than 3 dB	C
	(bb) Technology unique to transistors based upon gallium arsenide	D
	(c) Transistors based upon any semiconductor material other than germanium, silicon or gallium arsenide	C
	In this entry— “maximum collector dissipation” is the continuous dissipation measured under the optimum cooling conditions specified by the manufacture; “operating frequency” is the frequency used in measuring any of the following: (a) output power; (b) power gain (GpE, GpB, GpC, GpS, or GpD); (c) gain bandwidth product (fT); or (d) noise figure
IL1547	Thyristors, the following: and dice and wafers therefor—
	(a) Designed for use in pulse modulators having a rated turn-on time of less than 1 microsecond where the rated peak current exceeds 150 A	C
	(b) Having a rated turn-off time of less than 1 microsecond	C
	(c) Having a rated turn-off time of from 1 microsecond to less than 2.3 microseconds, except those having a rated peak current of 50 A or less and encapsulated in non-hermetically sealed packages	C
	(d) Having a rated turn-off time of from 2.3 to 10 microseconds and a figure of merit more than 100	C
	In this entry— “figure of merit” is the product of the repetitive peak off-state voltage (vdrm) in kilovolts and the repetitive peak on-state current (1 trm) in amperes as shown on the thyristor data sheets; the “turn-off time” for gate-turn-off thyristors is the sum of the gate controlled time TDQ and the gate controlled fall time Tfq to reach 10 per cent of the initial on-state current.
IL1548	Photosensitive components, including linear and focal-plane arrays, the following: and dice and wafers therefor—
	(a) Photosensitive components, including photodiodes, phototransistors, photothyristors, photoconductive cells and similar photosensitive components, having either of the following characteristics—
	(1) having a peak sensitivity at a wavelength longer than 1,200 nanometres or shorter than 190 nanometres	C
	or
	(2) having a peak sensitivity at a wavelength shorter than 300 nanometres and having an efficiency of less than 0.1 per cent relative to peak response at wavelengths longer than 400 nanometres	C
	except vacuum photodiodes specially designed for use in spectrophotometry having a peak response at a wavelength shorter than 300 nanometres.
	(b) Semiconductor photodiodes and phototransistors with a response time constant of 95 ns or less measured at the operating temperature for which the time constant reaches a minimum	C
	except semiconductor photodiodes which are not space qualified with a response time constant of 0.5 ns or more and with a peak sensitivity at a wavelength neither longer than 920 nm nor shorter than 300 nm
	(c) Photo sensitive components specially designed or rated as electromagnetic, including laser and ionized-particle radiation resistant	C
	(d) Linear and focal plane arrays (hybrid or monolithic) having the characteristics specified in heads (a)(1) or (2) or (b) above, and specially designed components therefor	C
	There shall be excluded from this entry— (a) germanium photo devices with a peak sensitivity at a wavelength shorter than 1,750 nanometres; (b) infrared single-element encapsulated photoconductive cells or pyroelectric detectors intended for civil applications and using any of the following— (1) evaporated lead sulphide; (2) trigylcine sulphate with a surface area of 20 mm2 or less; (3) lead-lanthanum-zirconium titanate ceramic; (c) single-element encapsulated mercury-cadmium-telluride (HgCdTe) uncooled (295 K ambient temperature operation) photo-electro-magnetic (pem) or photoconductive (pc) mode photodetectors with a peak sensitivity at a wavelength shorter than 11,000 nanometres. In this entry— The “time constant” is the time taken from the application of a light stimulus for the current increment to reach a value of 1-1/e times the final value (ie 63 per cent of the final value); “space qualified” means products which are stated by the manufacturer as designed and tested to meet the special electrical, mechanical or environmental requirements for use in rockets, satellites or high-altitudes flight systems operating at altitudes of 100 km or more.
IL1549	Photomultiplier tubes, the following—
	(a) Those for which the maximum sensitivity occurs at wavelengths shorter than 300 nanometres	C
	except photomultiplier tubes specially designed for use in spectrophotometry having a peak sensitivity at a wavelength shorter than 300 nanometres.
	(b) Those having an anode pulse rise time of less than 1 nanosecond	C
	(c) Those which contain microchannel-plate electron multipliers	C
IL1553	Flash discharge type X-ray systems, including tubes, having all of the following characteristics—	C
	(a) Peak power greater than 500 MW; (b) Output voltage greater than 500 kV; (c) Pulse width less than 0.2 microsecond
IL1555	Electron tubes, the following: and specially designed components therefor—
	(a) Electron tubes for image conversion or intensification which incorporate any of the following—
	(1) fibre optic face plates specified in head (a) of the entry IL1556 in this Group	C
	(2) microchannel-plate electron multipliers	C
	or
	(3) gallium arsenide or other epitaxially grown semi-conductor photocathodes specified in head (c) to the entry IL1556 in this Group	C
	(aa) Technology for image intensifiers or converters incorporating fibre-optic plates or microchannel plate electron multipliers, or electron tubes for cameras incorporating such intensifiers or converters	D
	(b) Electron tubes for television/video cameras, having any of the following characteristics—
	(1) incorporating fibre-optic face plates specified in head (a) of the entry IL1556 in this Group	C
	(2) incorporating microchannel-plate electron multipliers	C
	or
	(3) coupled with electron tubes specified at head (a) above	C
	(c) Ruggedised electron tubes for television/video cameras having a maximum length-to-bulb diameter ratio of 5:1 or less	C
	There shall be excluded from this entry— commercial standard television/video camera tubes not incorporating fibre-optic plates specified in head (a) of the entry IL1556; commercial standard X-ray amplifier tubes.
IL1556	Optical elements and elements for optical tubes, the following—
	(a) Non-flexible fused fibre-optic plates or bundles, having all of the following characteristics—	C
	(1) a fibre pitch (centre-to-centre spacing) of less than 10 micrometres; (2) a light-absorbing medium surrounding each fibre, or interstitially placed between fibres; and (3) a diameter greater than 13 mm;
	(b) Microchannel-plates for electron image amplification, having both of the following characteristics—	C
	(1) 15,000 or more hollow tubes per plate; and (2) hole pitch (centre-to-centre spacing) of less than 25 micro-metres
	(c) Semi-transparent photocathodes incorporating epitaxially grown layers of compound semiconductors, such as gallium arsenide	C
	(d) Diffractive type optical elements specially designed for display screens, with any of the following characteristics—
	(1) a transmission of more than 90 per cent outside the reflection band and reflection of more than 75 per cent inside the reflection band, which has less than 15 nanometres bandwidth and is matched to the frequency of the display light source	C
	(2) a rear projection screen brightness gain of more than 10 times the gain of a Lambertian scatterer with an equivalent area, and less than 10 per cent variation in brightness across the exit aperture	C
	or
	(3) specially designed for use in helmet-mounted displays	C
IL1558	Electronic vacuum tubes (valves) and cathodes, the following: and other components specially designed for those tubes—
	(a) Tubes in which space charge control is utilized as the primary functional parameter, including triodes and tetrodes, the following	C
	(1) tubes rated for continuous wave operation having either of the following characteristics—
	(i) those above 4 GHz at maximum rated anode dissipation	C
	or
	(ii) those within the frequency range 0.3 to 4 GHz and for which, under any condition of cooling, the product of the maximum rated anode dissipation, expressed in watts, and the square of the maximum frequency expressed in GHz, at the maximum rated anode dissipation is greater than 104; except tubes specially designed for television transmitters operating in the frequency range of 0.047 to 0.96 GHz and rated for operation without a grid current, for which the product of the rated anode dissipation, expressed in watts, and the square of the maximum frequency, expressed in GHz, may reach 2 × 104	C
	(2) tubes rated only for pulse operation having either of the following characteristics—
	(i) above 1 GHz with maximum peak pulse output power greater than 45 kW	C
	or
	(ii) between 0.3 and 1 GHz and for which, under any condition of cooling, the product of the peak pulse output power, expressed in watts, and the square of the maximum frequency, expressed in GHz, is greater than 4.5 × 104	C
	(3) tubes specially designed for use as pulse modulators for radar or similar applications, having a peak anode voltage rating of 100 kV or more, or rated for a peak pulse power of 20 MW or more	C
	(b) Tubes which utilize interaction between a beam of electrons and microwave elements and in which the electrons travel in a direction perpendicular to the applied magnetic field, including but not limited to magnetrons, crossed-field amplifier tubes and crossed-field oscillator tubes	C
	except— (i) fixed frequency and tunable pulsed magnetrons and crossfield amplifier tubes which are in normal civil use, the following— (1)  magnetrons designed to operate at frequencies below 3 GHz with a maximum rated peak output power of 5 MW or less, or between 3 to 12 GHz with the product of the maximum rated peak output power, expressed in kilowatts, and the frequency, expressed in Giga-hertz, less than 4,200 and a frequency tuning time of more than 100 milliseconds; (2)  crossed-field amplifier tubes designed to operate at frequencies below 4 GHz with a maximum rated average output power of 1.2 kW or less, a bandwidth of 200 MHz or less and a gain of less than 15 dB; (ii) fixed frequency continuous wave magnetrons designed for medial use or for industrial heating or cooking purposes operating at a frequency of 2.375 GHz ±0.05 GHz or 2.45 GHz ±0.05 GHz with a maximum rated output power not exceeding 6 kW or, at a frequency lower than 1 GHz, with a maximum rated output power not exceeding 35 kW; (iii) magnetrons, specially designed for particle accelerators for medical radiation therapy, having all of the following characteristics— (1)  capable of operation only at a frequency of 3,000 MHz ±15 MHz or at a frequency of 2,856 MHz ±15 MHz; (2)  not capable of being tuned mechanically or electronically outside the above bands; (3)  mechanically tuned within the above bands; (4)  having a peak output power not exceeding 10 MW and an average output power not exceeding 15 kW. The exception in paragraph (iii) above does not apply to technological documents the information in which relates to goods excluded in paragraph (iii).
	(c) Tubes which utilise interaction between a beam of electrons and microwave elements or cavities and in which the electrons travel in a direction parallel to the applied magnetic field (including Klystrons or travelling wave tubes)	C
	except— (i) continuous wave tubes having all of the following characteristics— (1) designed for use in civil ground communication; (2) an instantaneous bandwidth of half an octave or less, ie the highest operating frequency is not higher than 1.5 times the lower operating frequency; (3) the product of the rated output power (expressed in W) and the maximum operating frequency (expressed in GHz) of no more than 300; (4) an operating frequency no higher than 20 GHz; (5) no multiple grid electron guns; and (6) collectors with no more than two depressed stages; (ii) pulsed tubes, having all of the following characteristics— (1) for civil applications (2) an instantaneous bandwidth of half an octave or less ie the highest operating frequency is not higher than 1.5 times the lowest operating frequency; (3) collectors with no more than two depressed stages; and (4) either of the following: (a)  a peak saturated output power not exceeding 1 kW, an average output power not exceeding 40 W and the operating frequency not exceeding 10 GHz;  or (b)  a peak saturated output not exceeding 100 W, an average output power not exceeding 20 W and the operating frequency between 10 and 20 GHz; (iii) pulsed tubes, having all of the following characteristics— (1) for civil applications; (2) designed for fixed frequency operation; (3) operating frequencies below 3.5 GHz; (4) a peak output power of 1.6 MW or less; and (5) an operating bandwidth of less than 1 per cent; (iv) tubes, having all of the following characteristics— (1) used as fixed-frequency or voltage-tunable oscillator tubes; (2) designed to operate at frequencies below 20 GHz; and (3) a maximum output power of less than 3 W; (v) klystrons specially designed for particle accelerators for medical radiation therapy, having all the following characteristics— (1) capable of operation only at a frequency of 3,000 MHz ±15 MHz or at a frequency of 2,856 MHz ±15 MHz; (2) not capable of being tuned mechanically or electronically outside the above bands; (3) mechanically tuned within the above bands; (4) having a peak output power not exceeding 10 MW and an average output power not exceeding 15 kW.
	The exception in paragraph (v) above does not apply to technological documents the information in which relates to goods excluded in paragraph (v).
	(d) Tubes which utilize interaction between an electron beam and microwave elements or cavities but do not require a magnetic field to control or focus the electron beam, except low power reflex oscillator klystrons designed to operate at frequencies below 20 GHz and at a maximum output power of less than 3 W	C
	(e) Tubes which utilize interaction between a beam of electrons and microwaves elements or cavities in which the electrons drift in a direction parallel to the applied magnetic field but also require for their operation a large component of velocity transverse to the direction of the applied magnetic field, including gyrotrons, ubitrons and peniotrons	C
	(f) Tubes designed to withstand on any axis an acceleration of short duration (shock) greater than 1,000 g	C
	(g) Tubes designed for operation in ambient temperatures exceeding 200°C	C
	(h) Tubes of the type specified in heads (c), (d) or (e) above, which are designed to operate with no filament or cathode heating element as indicated by the absence of heating supply connections	C
	(i) Tubes which utilize a modulated bean of electrons striking one or more semiconductor diodes to provide power gain	C
	(j) Cathodes for electronic vacuum tubes, the following—
	(1) those specially designed for tubes specified in heads (a) to (i) above (inclusive)	C
	or
	(2) impregnated cathodes capable of producing a current density exceeding 0.5 A/cm2 at rated operating conditions	C
	In this entry— “frequency tuning time” is the time required to change the operating frequency from a starting frequency, through the maximum frequency, through the minimum frequency, and return to the starting frequency, ie one complete tuning cycle. (“Frequency tuning time”:
IL1559	Hydrogen/hydrogen isotope thyratons of ceramic-metal construction and having any of the following characteristics: and accessories therefor—
	(a) A peak pulse power output exceeding 12.5 MW	C
	(b) A peak anode voltage greater than 25 kV	C
	(c) A peak current rating greater than 1.5 kA	C
	Note. For thyratrons rated for both single-shot (crowbar) and modulator service, the figure for modulator service should be used.
IL1560	Capacitors designed for or capable of maintaining their rated electrical and mechanical characteristics during their specified operating lifetime, and technology therefor, the following—
	(a) Monolithic ceramic capacitors (other than boundary layered capacitors) using non-ferro-electric strontium titanate (SrTiO3) dielectric rated for operation over the whole range of ambient temperatures from below −55°C to above +85°C	C
	(b) Technology for the design and production of tantalum capacitors rated for operation at ambient temperatures exceeding 125°C, except sintered electrolytic types having a casing made of epoxy resin or which are sealed or coated with opoxy resin	D
IL1561	Materials specially designed and manufactured for use as absorbers of electromagnetic waves having frequencies greater than 2 × 108 Hz and less than 3 × 1012 Hz	C
	except, save when contained in paint, (i) hair type absorbers, whether constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption; (ii) absorbers whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces, and which have no magnetic loss; and (iii) absorbers having all of the following characteristics— (1) they are made of: (a) plastic foam materials (flexible or non-flexible) with carbon-loading to provide absorption; or (b) organic binders with magnetic material loading which do not provide broad-band absorption performance with low reflectivity; (2) the incident surface is planar; (3) their tensile strength is less than 7 × 106 N/m2; and (4) their compressive strength is less than 14 × 106 N/m2; and (5) they cannot withstand more than 450 K (177°C). In this entry— “Broad-band absorption performance with low reflectivity” means less than 5 per cent echo compared with metal over a bandwidth greater than ±15 per cent of the centre frequency of the incident energy.
IL1564	Assemblies of electronic components, modules, printed circuit boards with mounted components, substrates and integrated circuits, including packages therefor, the following— NOTE: Integrated circuits are categorized as follows: monolithic integrated circuits microcomputer microcircuits microprocessor microcircuits multichip integrated circuits film type integrated circuits hybrid integrated circuits optical integrated circuits
	(a) Substrates for printed circuit boards, including ceramic substrates and coated metal substrates (single-sided, double-sided or multilayer), and thin copper foils therefor	C
	except— (1) printed circuit boards manufactured from any of the following materials— (a) paper base phenolics; (b) glass cloth melamine; (c) glass epoxy resin uncoated or coated with copper foil of a thickness of 18 micrometres or more; (d) polyethylene terephtahalate; or (e) any other insulating material having all of the following characteristics: (i)  a maximum continuous rated operating temperature not exceeding 423 K (150°C); (ii)  a dissipation factor equal to or more than 0.009 at 1 MHz; (iii)  a relative dielectric constant equal to or less than 8 at 1 MHz; and (iv)  a coefficient of expansion equal to or more than ±10−5/K over a temperature range of 273 K to 393 K (0°C to 120°C); (2) ceramic substrates having no more than two layers of interconnections, including the ground plane; or (3) copper foil having a thickness of 18 micrometre or more;
	(b) Ceramic packages for integrated circuits which are designed for hermetically sealed pin or pad grid array, leadless carrier or surface-mounted configurations	C
	except those having all of the following characteristics— (1) single-in-line, dual-in-line or flat-pack configuration; (2) pin, pad or lead spacings of 2.50 mm or more; and (3) 40 leads or less;
	(c) Assemblies, modules and printed circuit boards with mounted components, with any of the following characteristics—
	(1) those which include substrates for printed circuit boards specified in head (a) above	C
	(2) those which contain components specified in this Schedule	C
	except— (a) where the only components specified in this Schedule which they contain are capacitors; (b) power supply assemblies; (c) non-coherent light-emitting alphanumeric displays, which if incorporated monolithic integrated circuits have both the following characteristics:— (i)  used for decoding, controlling or driving the display; and (ii)  not integral with the actual display device; or (f) simple encapsulated photo-coupler (transopter) assemblies, having both of the following characteristics— (i)  electrical input and output; and (ii)  any incorporated light-emitting diode can only emit non-coherent light; (i) assemblies, modules or printed circuit boards with mounted components, having both of the following characteristics— (i)  designed for equipment not specified elsewhere in this Schedule; and (ii)  substantially restricted to the particular application for which they have been designed by nature of: (1)   design; (2)   performance; (3)   lack of user-accessible microprogrammability; (4)   lack of user-accessible programmability; (5)   software; (6)   microprogramme control; or (7)   specialized logic control. NOTES: 1. For assemblies, modules or printed circuit boards with mounted components which are designed for, or which have the same functional characteristics as, electronic computers or related equipment, see entry IL1565 in Group 3G. 2. This head does not apply to assemblies, modules or printed circuit boards with mounted components which are designed for, or which have the same functional characteristics as, equipment specified elsewhere in this Schedule.
	(d) Monolithic integrated circuits, microcomputer microcircuits, microprocessor microcircuits, multichip integrated circuits, film type integrated circuits, hybrid integrated circuits and optical integrated circuits	C
	except— (1) encapsulated passive networks save technology for the manufacture of thin film passive networks; (2) encapsulated integrated circuits, having all of the following characteristics— (A) not designed or rated as radiation hardened; (B) not rated for operation at an ambient temperature below 233 K (−40°C) or above 358 K (85°C); (C) packaged in any of the following casings:  (i)  TO-5 outline cases (diameter 7.7 to 9.4mm);  (ii)  hermetically sealed dual in-line cases; or  (iii)  non-hermetically sealed cases; and (D) being any of the following types:  (a)  bipolar monolithic integrated circuits, having all of the following characteristics:   (1)   designed to perform a single digital logic function or a combination of digital logic functions;   (2)   encapsulated in packages having 24 terminals or less;   (3)   a basic gate propagation delay time of no less than 3 ns;   (4)   a basic gate power dissipation of no less than 2 mW; and   (5)   a product of the basic gate propagation delay time and the basic gate power dissipation per gate of no less than 30 pJ for types having a basic gate propagation delay time of 3 ns or more and less than 5 ns;  (b)  bipolar monolithic integrated circuits, having all of the following characteristics:   (1)   designed for operation in civil applications;   (2)   being either:    (a)    electronic switches, externally controlled by inductive, magnetic or optical means; or    (b)    threshold value switches; and   (3)   with switching times of 0.5 microsecond or more;  (c)  complementary metal-oxide semiconductor (CMOS) monolithic integrated circuits, having all of the following characteristics:   (1)   designed for operation as digital logic circuit elements but limited to gates, inverters, buffers, flip-flops, latches, multivibrators, bilateral switches, display drivers, fixed counters, fixed frequency dividers, storage registers, decoders, voltage translators, encoders, Schmidt triggers, delay timers, carry generators, clock generators, and any combination of the above digital logic functions;   (2)   encapsulated in packages having 24 terminals or less; and   (3)   a minimum value of the basic gate propagation delay time under any rated condition of no less than 10 ns;  (d)  positive-channel type or negative-channel type metal-oxide semiconductor (PMOS or NMOS) monolithic integrated circuits, having all of the following characteristics:   (1)   designed for and by virtue of circuit design limited to use as serial digital shift registers;   (2)   a maximum clock rate of 10 MHz; and   (3)   a maximum of 1,024 bit per package;  (e)  silicon microcomputer microcircuits (save bit slice microcomputer microcircuits) having all of the following characteristics:   (1)   mask programmed by the manufacturer for a civil application prior to exportation;   (2)   a word size to speed ratio of less than or equal to 1.1 bit per microsecond;   (3)   a speed-power dissipation product of more than or equal to 1.2 microjoule;   (4)   not containing on-the-chip;    (a)    a read-only storage (ROM) of more than 8,192 byte (not including the storage space needed for the micro-programme);    (b)    a random access storage (RAM) of more than 256 byte;    (c)    a programmable read-only storage (PROM);    (d)    multiplication capabilities;    (e)    general purpose operating systems including CP/M; or    (f)    high order languages including Tiny Basic;   (5)   an operand (data) word length of less than or equal to 8 bit;   (6)   not capable of using storage off-the-chip for programme storage; and   (7)   not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);  (f)  silicon monolithic integrated circuits, micro-computer microcircuits, microprocessor micro-circuits, multichip integrated circuits, film type integrated circuits, hybrid integrated circuits, or optical integrated circuits, having both of the following characteristics:   (1)   no user-accessible microprogrammability; and   (2)   designed or programmed by the manufacturer for one or more of the following applications:    (a)    car electronics including entertainment, instrumentation, safety, comfort, operations or pollution;    (b)    home electronics, including audio and video equipment, appliances, safety, education, comfort, remote controlled toys or amusement;    (c)    timekeeping applications including watches or clocks;    (d)    personal communications up to 150 MHz, including amateur radio communication and intercom;    (e)    cameras not specified elsewhere in this Schedule including cine cameras but excluding imaging micro-circuits;    (f)    medical electronic prostheses including cardiac pacemakers, hearing aids; or    (g)    civil telephone subscriber sets providing neither ISDN functions nor encryption. NOTE:   The temperature limits specified in exception (2)(B) to head (d) above do not apply to exception (2)(D)(f)(2)(a) or (f) to head (d) above.  (g)  monolithic integrated circuits or hybrid integrated circuits, having all of the following characteristics:   (1)   not capable of addressing off-the-chip storage;   (2)   no user-accessible microprogrammability; and   (3)   designed for and by virtue of circuit design limited to use in simple calculators, having both of the following characteristics:    (a)    performing a single function in response to a keystroke; and    (b)    capable of performing floating point additions of a maximum of 13 decimal digits (mantissa only) in not less than 20 ms;  (h)  monolithic integrated circuits or hybrid integrated circuits, having both of the following characteristics:   (1)   no user-accessible microprogrammability; and   (2)   designed for and by virtue of circuit design limited to use in simple key programmable calculators, having both of the following characteristics:    (a)    capable of executing a sequence of no more than 256 programme steps introduced into a programme storage on-the-chip by a sequence of keystrokes; and    (b)    capable of performing floating point additions of a maximum of 13 decimal digits (mantissa only) in not less than 20 ms;  (i)  silicon microprocessor microcircuits (save bit slice microprocessor microcircuits), having all of the following characteristics:   (1)   a word size to speed ratio of less than or equal to 1.25 bit per microsecond;   (2)   a speed-power dissipation product of more than or equal to 2 microjoule;   (3)   not containing on-the-chip;    (a)    read-only storage (ROM);    (b)    programmable read-only storage (PROM);    (c)    random-access storage (RAM) of more than 1,024 bit; or    (d)    multiplication instructions;   (4)   capable of addressing storage off-the-chip of no more than 65,536 byte;   (5)   an operand (data) word length of less than or equal to 8 bit;   (6)   an arithmetic logic unit (ALU) not wider than 8 bit; and   (7)   not rated for operation at am ambient temperature below 253 K (−20°C) or above 348 K (75°C);  (j)  storage monolithic integrated circuits or multi-chip integrated circuits, the following:   (1)   read-only memory (ROMs), having all of the following characteristics:    (a)    mask programmed by the manufacturer for a civil application prior to exportation;    (b)    a maximum of 8,192 bit per package;    (c)    a maximum access time of no less than 450 ns; and    (d)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (2)   positive-channel type or negative-channel type metal-oxide semiconductor read-only memory (PMOS- or NMOS-ROMs), having all of the following characteristics:    (a)    mask programmed by the manufacturer for a civil application prior to exportation;    (b)    a maximum of 32,768 bit per package;    (c)    a maximum access time of no less than 450 ns; and    (d)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (3)   positive-channel type or negative-channel type metal-oxide semiconductor read-only memory (PMOS- or NMOS-ROMs), having all of the following characteristics:    (a)    mask programmed or designed as character generators for a standard character font;    (b)    a maximum access time of not less than 250 ns; and    (c)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (4)   programmable (non-erasable) read-only memory (PROMs) having all of the following characteristics:    (a)    programmed by the manufacturer for a civil application prior to exportation;    (b)    a maximum of 2,048 bit per package;    (c)    a maximum access time of not less than 250 ns; and    (d)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (5)   programmable (non-erasable) read-only memory (PROMs) having all of the following characteristics:    (a)    programmed by the manufacturer for a civil application prior to exportation;    (b)    a maximum of 8,192 bit per package;    (c)    a maximum access time of not less than 450 ns; and    (d)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (6)   bipolar random-access memory (RAMs), having any of the following pairs of characteristics:    (a)    a maximum of 64 bit per package and a maximum access time of not less than 30 ns;    (b)    a maximum of 256 bit per package and a maximum access time of not less than 40 ns; or    (c)    a maximum of 1,024 bit per package and a maximum access time of not less than 45 ns;   (7)   metal-oxide-semiconductor dynamic random access memory (MOS-DRAMs), having all of the following characteristics:    (a)    a maximum of 4,096 bit per package;    (b)    a maximum access time of not less than 250 ns; and    (c)    not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C);   (8)   metal-oxide semiconductor static random access memory (MOS-SRAMs), having both of the following characteristics:    (a)    a maximum of 1,024 bit per package; and    (b)    a maximum access time of not less than 340 ns;  (k)  amplifier monolithic integrated circuits, multi-chip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following:   (1)   audio amplifiers:    (a)    having a maximum rated continuous power output of 50 W or less at am ambient temperature of 298 K (25°C); or    (b)    encapsulated in non-hermetically sealed packages;   (Note: For audio amplifiers, the 358 K (85°C) upper temperature limit specified in exception (2)(B) to head (d) above is not applicable.)   (2)   instrumentation amplifiers, having all of the following characteristics:    (a)    a best-case rated linearity of no better than ±0.01 per cent at a gain of 100;    (b)    a maximum gain-bandwidth product of no more than 7.5 expressed in MHz (eg a maximum bandwidth of 75 kHz at −3 dB and a gain of 100); and    (c)    a typical slew rate at unity-gain not exceeding 3 V/microsecond;   (3)   isolation amplifiers;   (4)   operational amplifiers, having all of the following characteristics:    (a)    a typical unity-gain open-loop bandwidth of no more than 5 MHz;    (b)    a typical open-loop voltage gain of no more than 106, ie 120 dB;    (c)    either:     (i)     a maximum intrinsic rated input offset voltage of no less than 1.0 mV; or     (ii)     a maximum input offset voltage drift of no less than 5 microvolt/K;    (d)    a typical slew rate at unity-gain not exceeding 6 V/microsecond; and    (e)    a typical power dissipation of more than 10 mW per amplifier, if the typical slew rate at unity-gain exceeds 2.5 V/microsecond;   (5)   untuned alternating current (AC) amplifiers, having both of the following characteristics:    (a)    a bandwidth of less than 3 MHz; and    (b)    a maximum rated power dissipation of 5 W or less at an ambient temperature of 298 K (25°C);  (l)  analogue multiplier or divider monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, having both of the following characteristics:   (1)   a best-case rated linearity of no better than ±0.5 per cent of full scale; and   (2)   a −3 dB small signal bandwidth of no more than 1 MHz;  (m)  converter monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following:   (1)   analogue-to-digital converters, having both of the following characteristics:    (a)    a maximum conversion rate to rated accuracy of no more than 50,000 complete conversions per second, ie a conversion time to maximum resolution of no less than 20 micro-second; and    (b)    an accuracy of no better than ±0.025 per cent of full scale over the specified operating temperature range;   (2)   analogue-to-digital converters, having both of the following characteristics:    (a)    designed for digital voltmeter applications; and    (b)    permitting characteristics corresponding to those of instruments specifically excluded from head (f) of the entry IL1529 in this Group;   (3)   digital-to-analogue converters, having both of the following characteristics:    (a)    a maximum settling time to rated linearity of no less than:     (i)     5 microseconds for voltage output converters; or     (ii)     250 ns for current output converters; and    (b)    non-linearity of equal to or worse than ±0.025 per cent of full scale over the specified operating temperature range;   (4)   voltage (rms-to-DC) converters;   (5)   voltage-to-frequency converters having all of the following characteristics:    (a)    not employing delta or delta/sigma modulation techniques;    (b)    a rated accuracy of no better than ±0.01 per cent of full scale; and    (c)    a gain drift of no less than ±50 × 10−6/K at rated frequency;    Note: “Gain drift” means the maximum change in gain over a specified temperature range.  (n)  interface monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following:   (1)   line drivers and line receivers having a typical propagation delay time from data input to output of not less than 15 ns;   (2)   peripheral or display drivers, having all of the following characteristics:    (a)    a maximum rated output current of 500 mA or less;    (b)    a typical propagation delay time from data input to output of not less than 20 ns; and    (c)    a maximum rated output voltage of 80 V or less;   (3)   sense amplifiers, having both of the following characteristics:    (a)    a typical propagation delay time from data input to output of not less than 15 ns; and    (b)    a typical input threshold voltage of not less than 10 mV;   (4)   storage or clock drivers, having all of the following characteristics:    (a)    a maximum rated output current of 500 mA or less;    (b)    a maximum rated output voltage of 30 V or less; and    (c)    a typical propagation delay time from data input to output of not less than 20 ns;  (o)  peripheral positive-channel type or negative channel type metal-oxide-seminconductor (PMOS or NMOS) monolithic integrated circuits or multichip integrated circuits, designed only for:   (1)   the support of microprocessor microcircuits which are excluded by exception (2)(D)(i) to head (d) above; and   (2)   having any of the following functions:    (a)    parallel input/output controller (PIO);    (b)    serial input/output controller (SIO);    (c)    dual asynchronous receiver/transmitter (DART); or    (d)    counter/timer circuit (CTC);  (p)  sample and hold monolithic integrated circuits, hybrid integrated circuits, film type integrated circuits or multichip integrated circuits, having both of the following characteristics:   (1)   an acquisition time of not less than 10 microseconds; and   (2)   a non-linearity, of equal to or worse than ±0.01 per cent of full scale for a hold time of 1 microsecond;  (q)  timing monolithic integrated circuits, hybrid integrated circuits, film type integrated circuits or multichip integrated circuits, having both of the following characteristics:   (1)   a typical timing error of not less than ±0.5 per cent; and   (2)   a typical rise time of not less than 100 ns;  (r)  voltage monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following—   (1)   voltage comparators, having both of the following characteristics:    (a)    a maximum input offset voltage of not less than 2 mV; and    (b)    a typical switching speed (ie typical response time) of not less than 30 ns;   (2)   voltage references, having both of the following characteristics:    (a)    a rated accuracy of not better than ±0.1 per cent; and    (b)    a temperature coefficient of the voltage of not less than 15 × 10−6/K;   (3)   linear type voltage regulators, having both of the following characteristics:    (a)    a rated nominal output voltage of 50 V or less; and    (b)    a maximum output current of 2A or less;   (4)   switching type voltage regulators, having both of the following characteristics:    (a)    a rated nominal output voltage of 40 V or less; and    (b)    a maximum output current of 150 mA or less;   Note: For voltage regulators, the 358 K (85°C) upper temperature limit specified in exception (2)(B) to head (d) above is not applicable.  (s)  non-coherent light-emitting alphanumeric displays, which do not incorporate other monolithic integrated circuits;  (t)  non-coherent light-emitting alphanumeric displays, which incorporate monolithic integrated circuits having both of the following characteristics:   (1)   used for decoding, controlling or driving the display; and   (2)   not integral with the actual display device;  (u)  simple encapsulated photocoupler (transopter) optical integrated circuits, having both of the following characteristics:   (1)   electrical input and output; and   (2)   any incorporated light-emitting diodes can emit only non-coherent light; (3) unencapsulated integrated circuits, having all of the following characteristics— (A) based exclusively upon silicon; (B) not designed or rated as radiation hardened; and (C) being any of the following types:  (a)  bipolar monolithic integrated circuits (save complex custom-built bipolar digital monolithic integrated circuits) having all of the following characteristics:   (1)   designed to perform a single digital logic function or a combination of digital logic functions;   (2)   a basic gate propagation delay time of not less than 5 ns;   (3)   a product of the basic gate propagation delay time and the basic gate power dissipation per gate of net less than 70 pJ; and   (4)   no more than 24 input/output pads;  (b)  bipolar monolithic integrated circuits (save complex custom-built bipolar digital monolithic integrated circuits) having all of following characteristics:   (1)   designed for operation in civil applications;   (2)   being either:    (a)    electronic switches, externally controlled by inductive, magnetic or optical means; or    (b)    threshold value switches;   (3)   with switching times of 0.5 microsecond or more; and   (4)   having no more than 24 input/output pads;  (c)  monolithic integrated circuits having all of the following characteristics:   (1)   no user-accessible microprogrammability;   (2)   designed for and by virtue of circuit design limited to use in civil radio or television receivers;   (3)   rated for operation at 11 MHz or less;   (4)   not designed for station scanning applications;   (5)   not utilizing charge-coupled device (CCD) technology;   (6)   not intended for beam lead bonding; and   (7)   if intended for video or luminance amplifiers, having both of the following characteristics:    (a)    a maximum rated supply voltage not exceeding 30 V; and    (b)    a typical bandwidth not exceeding 7.5MHz;  (d)  monolithic integrated circuits having all of the following characteristics:   (1)   no user-accessible microprogrammability;   (2)   not utilizing charge-coupled device (CCD) technology;   (3)   not intended for beam lead bonding; and   (4)   designed or programmed by the manufacturer for one or more of the following applications only:    (a)    timekeeping applications, including watches or clocks; or    (b)    cardiac pacemakers or hearing aids;  (e)  amplifier monolithic integrated circuits, the following:   (1)   audio amplifiers, having a maximum rated power ouput of 25 W or less at an ambient temperature of 298 K (25°C);   (2)   operational amplifiers, having all of the following characteristics:    (a)    a typical unity-gain open-loop bandwidth of not more than 5 MHz;    (b)    a typical open-loop voltage gain of not more than 562,000 ie 115 dB;    (c)    a maximum intrinsic rated input offset voltage of not less than 2.5 mV; and    (d)    a typical slew rate at unity-gain not exceeding 2.5 V/microsecond;  (f)  voltage monolithic integrated circuits, the following:   (1)   voltage comparators, having both of the following characteristics:    (a)    a maximum input offset voltage of not less than 5 mV; and    (b)    a typical switching speed (ie typical response time) of not less than 50 ns;   (2)   linear type voltage regulators having both of the following characteristics:    (a)    a rated nominal output voltage of 40 V or less; and    (b)    a maximum output current of 1A or less;   (3)   switching type voltage regulators having both of the following characteristics:    (a)    a rated nominal output voltage of 40 V or less; and    (b)    a maximum output current of 150 mA or less;   (4)   encapsulated integrated circuits having all of the following characteristics—    (a)    not designed or rated as radiation hardened;    (b)    not rated for operation at an ambient temperature below 233 K (−40°C) or above 358 K (85°C);    (c)    packaged in hermetically sealed ceramic packages which are specifically expected from head (b) of this entry; and    (d)    containing unencapsulated integrated circuits which are specifically excepted by exception (3) of head (d) of this entry.
	(dd)  Technological documents the information in which relates to the manufacture of thin film passive networks	D
	In this entry— “assembly” means a number of electronic components (eg circuit elements, discrete components, integrated circuits, etc) connected together to perform a specific function, replaceable as an entity and normally capable of being disassembled; “basic gate power dissipation” means the power dissipation value corresponding to the basic gate utilized within a family of monolithic integrated circuits. This may be specified, for a given family, either as the power dissipation per typical gate or as the typical power dissipation per gate; “basic gate propagation delay time” means the propagation delay time value corresponding to the basic gate utilized within a family of monolithic integrated circuits. This may be specified, for a given family, either as the propagation delay time per typical gate or as the typical propagation delay time per gate; “circuit element” means a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc; “discrete component” means a separately packaged circuit element with its own external connections; “film type integrated circuit” means an array of circuit elements and metallic interconnections formed by deposition of a thick or thin film on an insulating substrate; “hybrid integrated circuit” means any combination of integrated circuits, circuit elements or discrete components connected together to perform a specific function; “manufacturer” means the individual or organization designing an integrated circuit or a programmed for an intended application, in contrast to an individual or organization merely programming an integrated circuit at, or in accordance with, a user’s request; “microcomputer microcircuit” means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing general purpose instructions from an internal storage; on data contained in the internal storage; (the internal storage may be augmented by an external storage.) “microprocessor microcircuit” means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing a series of general purpose instructions from an external storage; (the microprocessor microcircuit normally does not contain integral user-accessible storage, although storage present on-the-chip may be used in performing its logic function.) “module” means a number of electronic components (eg circuit elements, discrete components, integrated circuits etc) connected together to perform a specific function, replaceable as an entity and not normally capable of being disassembled; “monolithic integrated circuit” means a combination of passive or active circuit elements or both which: (a) is formed by means of diffusion processes, implantation processes or deposition processes in or on a single semiconducting piece of material, a so-called “chip”; (b) can be considered as indivisibly associated; and (c) perform the function of a circuit; “multichip integrated circuit” means two or more monolithic integrated circuits bonded to a common substrate; “optical integrated circuit” means a monolithic integrated circuit or a hybrid integrated circuit, containing one or more parts designed to function as a photosensor or photoemitter or to perform an optical or electro-optical function; “speed” means the time to fetch an operand C and another operand D, both from an external storage outside any work register, add these operands and put the result back in storage. The addressing mode which yields the shortest execution time shall be used. The result of the add operation shall be stored in either the same location as one of the addends or in some other location. This choice shall be made to give the shortest execution time at the highest specified clock frequency; “speed-power dissipation product” means the product of the speed and the typical power dissipation which shall be taken at the clock frequency used in the speed computation. The typical power dissipation must be the lowest of the following: (a) the specified typical internal power dissipation; (b) one half the maximum internal power dissipation; (c) the product of the nominal supply voltage and typical total supply current; or (d) one half of the product of the nominal supply voltage and maximum total supply current; “substrate” means a sheet of base material with or without an interconnection pattern and on which or within which discrete components, integrated circuits or both can be located; “user-accessible microprogrammability” means the facility allowing a user to insert, modify or replace microprogrammes; “user-accessible programmability” means the facility allowing a user to insert, modify or replace programmes by means other than: (a) a physical change in wiring or interconnections; or (b) the setting of function controls including entry of parameters.