- Y Diweddaraf sydd Ar Gael (Diwygiedig)
- Gwreiddiol (Fel y’i mabwysiadwyd gan yr UE)
Commission Delegated Regulation (EU) 2020/1749 of 7 October 2020 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items
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[3B001] Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:
Equipment designed for epitaxial growth as follows:
Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more;
Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, or nitrogen;
Molecular beam epitaxial growth equipment using gas or solid sources;
Equipment designed for ion implantation and having any of the following:
Not used;
Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;
Direct write capability;
A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or
Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater;
Not used;
Not used;
Automatic loading multi-chamber central wafer handling systems having all of the following:
Interfaces for wafer input and output, to which more than two functionally different ‘semiconductor process tools’ specified in 3B001.a.1., 3B001.a.2., 3B001.a.3. or 3B001.b. are designed to be connected; and
Designed to form an integrated system in a vacuum environment for ‘sequential multiple wafer processing’;
Lithography equipment as follows:
Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
Imprint lithography equipment capable of producing features of 45 nm or less;
Micro contact printing tools
Hot embossing tools
Nano-imprint lithography tools
Step and flash imprint lithography (S-FIL) tools
Equipment specially designed for mask making having all of the following:
A deflected focussed electron beam, ion beam or "laser" beam; and
Having any of the following:
A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or
Not used;
A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;
Equipment designed for device processing using direct writing methods, having all of the following:
A deflected focused electron beam; and
Having any of the following:
A minimum beam size equal to or smaller than 15 nm; or
An overlay error less than 27 nm (mean + 3 sigma);
Masks and reticles, designed for integrated circuits specified in 3A001;
Multi-layer masks with a phase shift layer not specified in 3B001.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;
Imprint lithography templates designed for integrated circuits specified in 3A001.
Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:
Specially designed for ‘Extreme Ultraviolet’ (‘EUV’) lithography; and
Compliant with SEMI Standard P37.
‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
[3B002] Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:
For testing S-parameters of items specified in 3A001.b.3.;
Not used;
For testing items specified in 3A001.b.2.
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