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Council Regulation (EC) No 428/2009 of 5 May 2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (Recast)
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Silicon (Si);
Germanium (Ge);
Silicon carbide (SiC); F3...
"III/V compounds" of gallium or indium.
Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
[F4Gallium oxide (Ga2O3); or
Diamond (C);]
Textual Amendments
F3Word in Annex 1 Entry 3C001.c omitted (31.3.2023) by virtue of The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xii)
F4Words in Annex 1 Entry 3C001 inserted (31.3.2023) by The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xiii)
Textual Amendments
F2Words in Annex 1 Entry 3C001 inserted (1.4.2024) by The Export Control (Amendment) Regulations 2024 (S.I. 2024/346), regs. 1(1), 3(10)(a)
Resists designed for semiconductor lithography as follows:
Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;
All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;
Not used;
All resists optimised for surface imaging technologies;
All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.
Textual Amendments
F5Words in Annex 1 Entry 3C003.a substituted (1.4.2024) by The Export Control (Amendment) Regulations 2024 (S.I. 2024/346), regs. 1(1), 3(10)(b)
F6Words in Annex 1 Entry 3C003.b substituted (1.4.2024) by The Export Control (Amendment) Regulations 2024 (S.I. 2024/346), regs. 1(1), 3(10)(c)
Note:
3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule.
Note:
3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen.
Textual Amendments
F7Words in Annex 1 Entry 3C004 substituted (1.4.2024) by The Export Control (Amendment) Regulations 2024 (S.I. 2024/346), regs. 1(1), 3(10)(d)
Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride [F8(AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond semiconductor] "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C;
Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10 000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride [F9(AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond on] the surface of the "substrate".
Textual Amendments
F8Words in Annex 1 Entry 3C005.a substituted (31.3.2023) by The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xiv)
F9Words in Annex 1 Entry 3C005.b substituted (31.3.2023) by The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xv)
Textual Amendments
F10Words in Annex 1 Entry 3C006 substituted (31.3.2023) by The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xvi)
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